Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
16KX8 |
16K |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
131072 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
150 ns |
13 |
|||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
262144 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
13.97 mm |
100 ns |
13 |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
4194304 bit |
4.5 V |
13.97 mm |
150 ns |
|||||||||||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
16 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
52.455 mm |
100 ns |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
13.97 mm |
100 ns |
|||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
13.97 mm |
250 ns |
13 |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
262144 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
13.97 mm |
150 ns |
13 |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
16 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
52.455 mm |
150 ns |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
COMMON |
5 |
5 |
16 |
CHIP CARRIER |
LDCC44,.7SQ |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
QUAD |
S-PQCC-J44 |
5.5 V |
4.57 mm |
16.5862 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
16.5862 mm |
120 ns |
|||||||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
200 ns |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
OTP ROMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
18.415 mm |
120 ns |
|||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
16 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
52.455 mm |
100 ns |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
13.97 mm |
150 ns |
|||||||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
13.97 mm |
120 ns |
||||||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
250 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00003 Amp |
13.97 mm |
120 ns |
||||||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
41.4 mm |
200 ns |
||||||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16384 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
16KX8 |
16K |
-40 Cel |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
131072 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
13.97 mm |
200 ns |
13 |
|||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
200 ns |
13 |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
250 ns |
13 |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
OTP ROMs |
.5 mm |
85 Cel |
YES |
3-STATE |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
18.415 mm |
120 ns |
||||||||||||||||
Texas Instruments |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
250 ns |
|||||||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
3 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
ASYNCHRONOUS |
.02 mA |
1024 words |
COMMON |
2.7 |
3/5 |
1 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TO-236 |
OTP ROMs |
.95 mm |
85 Cel |
OPEN-DRAIN |
1KX1 |
1K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G3 |
1 |
5.5 V |
1.12 mm |
.01667 MHz |
1.3 mm |
Not Qualified |
1024 bit |
2.65 V |
ORGANIZED AS 4 PAGES OF 32 BYTES EACH |
e4 |
30 |
260 |
2.92 mm |
|||||||||||||
|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
3 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
ASYNCHRONOUS |
.02 mA |
1024 words |
COMMON |
2.7 |
3/5 |
1 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TO-236 |
OTP ROMs |
.95 mm |
85 Cel |
OPEN-DRAIN |
1KX1 |
1K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G3 |
1 |
5.5 V |
1.12 mm |
.01667 MHz |
1.3 mm |
Not Qualified |
1024 bit |
2.65 V |
ORGANIZED AS 4 PAGES OF 32 BYTES EACH |
e4 |
30 |
260 |
2.92 mm |
|||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8192 words |
8 |
DISK BUTTON |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8192 words |
8 |
DISK BUTTON |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2048 words |
8 |
DISK BUTTON |
85 Cel |
2KX8 |
2K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
16384 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2048 words |
8 |
DISK BUTTON |
85 Cel |
2KX8 |
2K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
16384 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
128 words |
3/5 |
8 |
DISK BUTTON |
BUTTON,.68IN |
Other Memory ICs |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e0 |
||||||||||||||||||||||||||||
|
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
1024 words |
COMMON |
5 |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
Other Memory ICs |
85 Cel |
1KX1 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
END |
O-MEDB-N2 |
1 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
MICROLAN COMPATIBLE |
e3 |
15000 ns |
||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8192 words |
8 |
DISK BUTTON |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2048 words |
8 |
DISK BUTTON |
85 Cel |
2KX8 |
2K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
16384 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8192 words |
8 |
DISK BUTTON |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||
|
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
1024 words |
5 |
1 |
CYLINDRICAL |
85 Cel |
1KX1 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e3 |
250 |
|||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
8192 words |
COMMON |
3/5 |
8 |
CYLINDRICAL |
SIP3,.1,50 |
Other Memory ICs |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
MICROLAN COMPATIBLE |
e0 |
||||||||||||||||||||||||
|
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
1024 words |
4 |
3/5 |
1 |
CYLINDRICAL |
SIP3,.1,50 |
SRAMs |
1.27 mm |
85 Cel |
1KX1 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e3 |
250 |
|||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
16384 words |
1 |
CYLINDRICAL |
85 Cel |
16KX1 |
16K |
-40 Cel |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
16384 bit |
2.8 V |
e0 |
||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
16384 words |
1 |
CYLINDRICAL |
85 Cel |
16KX1 |
16K |
-40 Cel |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
16384 bit |
2.8 V |
e0 |
||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
1024 words |
1 |
CYLINDRICAL |
85 Cel |
1KX1 |
1K |
-40 Cel |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e0 |
||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
1024 words |
1 |
CYLINDRICAL |
85 Cel |
1KX1 |
1K |
-40 Cel |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e0 |
||||||||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
ASYNCHRONOUS |
1024 words |
1 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
1KX1 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
1024 bit |
2.8 V |
e0 |
4.9 mm |
|||||||||||||||||||||||||
|
Analog Devices |
OTP ROM |
INDUSTRIAL |
3 |
TO-92 |
ROUND |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
ASYNCHRONOUS |
1024 words |
4 |
3/5 |
1 |
CYLINDRICAL |
SIP3,.1,50 |
SRAMs |
1.27 mm |
85 Cel |
1KX1 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
BOTTOM |
O-PBCY-T3 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e3 |
250 |
|||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
6 |
LSOC |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
C BEND |
SERIAL |
SYNCHRONOUS |
8192 words |
8 |
SMALL OUTLINE, LOW PROFILE |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-C6 |
6 V |
1.5 mm |
3.76 mm |
Not Qualified |
65536 bit |
2.8 V |
MICROLAN COMPATIBLE |
e0 |
3.94 mm |
|||||||||||||||||||||||||
Analog Devices |
OTP ROM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
ASYNCHRONOUS |
65536 words |
COMMON |
3/5 |
1 |
SMALL OUTLINE |
SOP8,.3 |
Other Memory ICs |
1.27 mm |
85 Cel |
64KX1 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
65536 bit |
2.8 V |
e0 |
4.9 mm |
|||||||||||||||||||||
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
OTP ROMs |
.5 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.63 V |
1.2 mm |
8 mm |
Not Qualified |
8388608 bit |
2.97 V |
e0 |
.00002 Amp |
18.4 mm |
120 ns |
|||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
42 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE |
DIP42,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T42 |
3.6 V |
5.08 mm |
15.24 mm |
Not Qualified |
33554432 bit |
3 V |
e3 |
.00006 Amp |
52.455 mm |
100 ns |
||||||||||||||||
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
15 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
Other Memory ICs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
3.63 V |
3.56 mm |
11.455 mm |
Not Qualified |
4194304 bit |
2.97 V |
e0 |
.00002 Amp |
13.995 mm |
200 ns |
|||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
15 mA |
65536 words |
COMMON |
3 |
3/3.3 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN |
QUAD |
R-PQCC-J32 |
3.6 V |
3.556 mm |
11.43 mm |
Not Qualified |
524288 bit |
2.7 V |
e3 |
.000015 Amp |
13.97 mm |
100 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
TIN/TIN BISMUTH |
DUAL |
R-PDSO-G28 |
3.6 V |
1.25 mm |
8 mm |
Not Qualified |
524288 bit |
2.7 V |
e3/e6 |
NOT SPECIFIED |
260 |
11.8 mm |
100 ns |
OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.
OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.
OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.