Analog Devices OTP ROM 42

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

DS2502P-E48+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.81 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

.000005 Amp

3.937 mm

DS2502P-E48+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

.000005 Amp

3.94 mm

DS2502P+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

DS2502R+T&R

Analog Devices

OTP ROM

INDUSTRIAL

3

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TO-236

Other Memory ICs

.95 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

6 V

1.12 mm

1.3 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

2.92 mm

15000 ns

DS2502P+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

15000 ns

DS2502-E48+

Analog Devices

OTP ROM

INDUSTRIAL

3

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

.005 mA

1024 words

COMMON

3/5

1

CYLINDRICAL

SIP3,.1,50

Other Memory ICs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

e3

250

.000005 Amp

DS2502S+

Analog Devices

OTP ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP8,.25

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

1

6 V

1.75 mm

3.9 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

4.9 mm

15000 ns

DS2502+

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

CYLINDRICAL

SIP3,.1,50

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

250

15000 ns

DS2502+T&R

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

CYLINDRICAL

SIP3,.1,50

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

250

15000 ns

DS2502P-E64+

Analog Devices

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

SYNCHRONOUS

1024 words

5

1

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

3.94 mm

DS2505P+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

15000 ns

DS2502X1+

Analog Devices

OTP ROM

INDUSTRIAL

2

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

GRID ARRAY, VERY THIN PROFILE

BGA4,2X2,37/16

Other Memory ICs

.933 mm

85 Cel

128X8

128

-40 Cel

TIN SILVER COPPER NICKEL

BOTTOM

R-PBGA-B2

1

6 V

.639 mm

.91 mm

Not Qualified

1024 bit

2.8 V

e2

30

260

1.6 mm

15000 ns

DS2406P+T&R

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

4

3/5

1

SMALL OUTLINE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

3.94 mm

DS2506S+

Analog Devices

OTP ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

SERIAL

ASYNCHRONOUS

65536 words

COMMON

5

3/5

1

SMALL OUTLINE

SOP8,.3

Other Memory ICs

1.27 mm

85 Cel

64KX1

64K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

6 V

2.13 mm

5.285 mm

Not Qualified

65536 bit

2.8 V

e3

30

260

5.31 mm

DS2505P+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

C BEND

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

3.94 mm

15000 ns

DS2406P+

Analog Devices

OTP ROM

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

4

3/5

1

SMALL OUTLINE

SOC6,.17

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

1024 bit

2.8 V

e3

30

260

3.94 mm

DS2505+

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

MOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

CYLINDRICAL

SIP3,.1

Other Memory ICs

2.54 mm

85 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

250

15000 ns

DS2502S+T&R

Analog Devices

OTP ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

128 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP8,.25

Other Memory ICs

1.27 mm

85 Cel

128X8

128

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

1

6 V

1.75 mm

3.9 mm

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

30

260

4.9 mm

15000 ns

DS1982-F3+

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

1024 words

COMMON

5

3/5

1

DISK BUTTON

BUTTON,.68IN

Other Memory ICs

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

END

O-MEDB-N2

6 V

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

15000 ns

DS2505+T&R

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

MOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

16384 words

COMMON

5

3/5

1

CYLINDRICAL

SIP3,.1

Other Memory ICs

2.54 mm

85 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

16384 bit

2.8 V

MICROLAN COMPATIBLE

e3

250

15000 ns

DS1986U-F3

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

8192 words

8

DISK BUTTON

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

e0

DS1986U-F3-PPPP

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

8192 words

8

DISK BUTTON

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

e0

DS1985U-F5-PPPP

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

8

DISK BUTTON

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

16384 bit

2.8 V

e0

DS1985U-F3

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

8

DISK BUTTON

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

16384 bit

2.8 V

e0

DS1422

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

128 words

3/5

8

DISK BUTTON

BUTTON,.68IN

Other Memory ICs

85 Cel

128X8

128

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

1024 bit

2.8 V

e0

DS1982-F5+

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

1024 words

COMMON

5

3/5

1

DISK BUTTON

BUTTON,.68IN

Other Memory ICs

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

END

O-MEDB-N2

1

6 V

Not Qualified

1024 bit

2.8 V

MICROLAN COMPATIBLE

e3

15000 ns

DS1986U-F5

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

8192 words

8

DISK BUTTON

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

e0

DS1985U-F3-PPPP

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

8

DISK BUTTON

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

16384 bit

2.8 V

e0

DS1986U-F5-PPPP

Analog Devices

OTP ROM

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

8192 words

8

DISK BUTTON

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

e0

DS1982-F5W+

Analog Devices

OTP ROM

DS2502PU-1176+

Analog Devices

OTP ROM

6

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

1024 words

1

85 Cel

1KX1

1K

-40 Cel

DUAL

R-PDSO-C6

6 V

1024 bit

2.8 V

DS2502-E64+

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

MOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

1024 words

5

1

CYLINDRICAL

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

e3

250

DS2506-UNW

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

8192 words

COMMON

3/5

8

CYLINDRICAL

SIP3,.1,50

Other Memory ICs

1.27 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

Not Qualified

65536 bit

2.8 V

MICROLAN COMPATIBLE

e0

DS2406+T&R

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

1024 words

4

3/5

1

CYLINDRICAL

SIP3,.1,50

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

e3

250

DS25051AT

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

16384 words

1

CYLINDRICAL

85 Cel

16KX1

16K

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

Not Qualified

16384 bit

2.8 V

e0

DS25051A

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

16384 words

1

CYLINDRICAL

85 Cel

16KX1

16K

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

Not Qualified

16384 bit

2.8 V

e0

DS25021AT

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

1024 words

1

CYLINDRICAL

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

e0

DS25021A

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

1024 words

1

CYLINDRICAL

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

e0

DS2502SY

Analog Devices

OTP ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

1024 words

1

SMALL OUTLINE

1.27 mm

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

1

6 V

1.75 mm

3.9 mm

Not Qualified

1024 bit

2.8 V

e0

4.9 mm

DS2406+

Analog Devices

OTP ROM

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

ASYNCHRONOUS

1024 words

4

3/5

1

CYLINDRICAL

SIP3,.1,50

SRAMs

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

1024 bit

2.8 V

e3

250

DS2506P-UNW

Analog Devices

OTP ROM

INDUSTRIAL

6

LSOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

SERIAL

SYNCHRONOUS

8192 words

8

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

6 V

1.5 mm

3.76 mm

Not Qualified

65536 bit

2.8 V

MICROLAN COMPATIBLE

e0

3.94 mm

DS2506S-UNW

Analog Devices

OTP ROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

65536 words

COMMON

3/5

1

SMALL OUTLINE

SOP8,.3

Other Memory ICs

1.27 mm

85 Cel

64KX1

64K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

1

6 V

1.75 mm

3.9 mm

Not Qualified

65536 bit

2.8 V

e0

4.9 mm

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.