CACHE SRAM MODULE SRAM 156

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Maximum Access Time
STCM256	STMicroelectronics	CACHE SRAM MODULE				RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY					3-STATE	256KX8	256K				UNSPECIFIED	1	R-XXMA-X	5.5 V		Not Qualified	2097152 bit	4.5 V	DIRECT MAPPED; 2-WAY SET ASSOCIATIVE; 8-BIT TAG WIDTH; ADDRESS LATCH		YES		15 ns
STCM128	STMicroelectronics	CACHE SRAM MODULE				RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY					3-STATE	128KX8	128K				UNSPECIFIED	1	R-XXMA-X	5.5 V		Not Qualified	1048576 bit	4.5 V	DIRECT MAPPED; 2-WAY SET ASSOCIATIVE; 8-BIT TAG WIDTH; ADDRESS LATCH		YES		15 ns
THMS161620Z-25	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED		1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel		16KX16	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40	5.5 V		Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0			25 ns
THMS121620Z-25	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED		1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		12	MICROELECTRONIC ASSEMBLY				70 Cel		16KX12	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40	5.5 V		Not Qualified	196608 bit	4.5 V		e0			25 ns
THMS121620Z-35	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		12	MICROELECTRONIC ASSEMBLY				70 Cel		16KX12	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40	5.5 V		Not Qualified	196608 bit	4.5 V		e0			35 ns
THMS161620Z-35	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel		16KX16	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40	5.5 V		Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0			35 ns
7MB6039S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	4750 mA	32768 words	COMMON	5	5	60	IN-LINE	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX60	32K		0 Cel	TIN LEAD	QUAD		R-PQIP-P128		33 MHz	Not Qualified	1966080 bit			e0
7MB6040S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4800 mA	16384 words	COMMON	5		64	MICROELECTRONIC ASSEMBLY	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	16KX64	16K		0 Cel	TIN LEAD	QUAD		R-PQMA-T128	5.5 V	33 MHz	Not Qualified	1048576 bit	4.5 V		e0			20 ns
7MB6049S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	120	QIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	3600 mA	16384 words	COMMON	5		60	MICROELECTRONIC ASSEMBLY	QI120,2.9/3.0,100	SRAMs	2.54 mm	70 Cel	3-STATE	16KX60	16K	4.5 V	0 Cel	TIN LEAD	QUAD		R-PQMA-T120	5.5 V	33 MHz	Not Qualified	983040 bit	4.5 V		e0		.75 Amp	20 ns
IDT7MB6049S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	120	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	3600 mA	32768 words	COMMON			60	IN-LINE	QI120,2.9/3.0,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX60	32K	4.5 V	0 Cel	TIN LEAD	QUAD		R-PQIP-P120		33 MHz	Not Qualified	1966080 bit			e0		.75 Amp
IDT7MB6039S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	4750 mA	32768 words	COMMON	5	5	60	IN-LINE	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX60	32K		0 Cel	TIN LEAD	QUAD		R-PQIP-P128		33 MHz	Not Qualified	1966080 bit			e0
IDT7MB6040S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	4800 mA	32768 words	COMMON			64	IN-LINE	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX64	32K		0 Cel	TIN LEAD	QUAD		R-PQIP-P128		33 MHz	Not Qualified	2097152 bit			e0
MT2LSYT3272T1G-11P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.004 Amp	11 ns
MT2LSYT3264T2G-10P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.004 Amp	10 ns
MT4LSY6472T6G-6P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1200 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES	.008 Amp	6 ns
MT2LSYT3264T2G-9	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.01 Amp	9 ns
MT2LSYT3272T1G-9	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.01 Amp	9 ns
MT2LSYT3272T4G-8P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.004 Amp	8 ns
MT2LSYT3272T2G-12	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.01 Amp	12 ns
MT4LSY6472T1G-10	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1000 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES	.02 Amp	10 ns
MT2LSYT3272T2G-9P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.004 Amp	9 ns
MT4LSY6472T6G-6	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1200 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES	.02 Amp	6 ns
MT4LSY6472T1G-9L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1000 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES		9 ns
MT2LSYT3264T2G-10	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.01 Amp	10 ns
MT4LSY6472T4G-6L	Micron Technology	CACHE SRAM MODULE		160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY					3-STATE	64KX72	64K	2 V			DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES		6 ns
MT4LSY6472T2G-9P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1000 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES	.008 Amp	9 ns
MT2LSYT3264T4G-6L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	630 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES		6 ns
MT2LSYT3272T1G-10P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.004 Amp	10 ns
MT4LSY6472T4G-5L	Micron Technology	CACHE SRAM MODULE		160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY					3-STATE	64KX72	64K	2 V			DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES		5 ns
MT2LSYT3272T2G-11L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES		11 ns
MT2LSYT3264T6G-6	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	630 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.01 Amp	6 ns
MT2LSYT3272T1G-10L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES		10 ns
MT2LSYT3264T4G-6	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	630 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.01 Amp	6 ns
MT2LSYT3264T1G-12P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	450 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.004 Amp	12 ns
MT2LSYT3272T6G-7P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.004 Amp	7 ns
MT4LSY6472T6G-8	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	840 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES	.02 Amp	8 ns
MT4LSY6472T4G-6	Micron Technology	CACHE SRAM MODULE		160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY					3-STATE	64KX72	64K				DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES		6 ns
MT2LSYT3272T1G-11L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES		11 ns
MT2LSYT3264T2G-10L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES		10 ns
MT2LSYT3264T2G-11L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES		11 ns
MT2LSYT3264T1G-12	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	450 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.01 Amp	12 ns
MT2LSYT3264T2G-12L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	450 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES		12 ns
MT4LSY6472T6G-5	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1340 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	4718592 bit	3.135 V			YES	.02 Amp	5 ns
MT2LSYT3264T4G-7L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES		7 ns
MT2LSYT3264T1G-10L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES		10 ns
MT2LSYT3272T6G-5	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.01 Amp	5 ns
MT2LSYT3272T1G-10	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2359296 bit	3.135 V			YES	.01 Amp	10 ns
MT2LSYT3264T4G-5	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	720 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V		Not Qualified	2097152 bit	3.135 V			YES	.01 Amp	5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.