DDR SRAM SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

R1QBA7218ABG-22RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QEA7218ABG-20RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QLA7218ABB-25IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.55 ns

R1QCA7236ABB-22RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QBA4418RBG-20IA0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

8MX18

8M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

17 mm

.45 ns

R1QFA3618CBB-19RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QFA7218ABB-19IS0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QFA3618CBB-22RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QLA4418RBG-25RT

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

8MX18

8M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

.55 ns

R1QEA3636CBB-22IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QLA7218ABG-25IA

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

850 mA

4194304 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

400 MHz

15 mm

Not Qualified

75497472 bit

1.7 V

.72 Amp

17 mm

.55 ns

R1QBA7218ABG-19RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1Q4A7236ABG-40RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QLA7218ABB-25IA

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.55 ns

R1QCA7218ABB-20IS

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

RMQC4A1818DGBA-332#AC0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX18

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

18874368 bit

1.7 V

15 mm

.45 ns

R1QEA7236ABB-19RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QCA3636CBB-19IT

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QFA7236ABB-19IT

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1Q6A7218ABB-33IS0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QMA7218ABG-25RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.55 ns

R1QFA7218ABB-19RA0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QFA7236ABB-22RA0

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QLA4436RBG-25RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX36

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

.55 ns

R1Q6A7236ABB-40IA0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QMA7218ABB-25RT

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.55 ns

R1QFA7236ABG-20IS0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QCA7236ABG-20RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QEA3618CBB-19IS

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX18

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QBA7218ABG-19RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QEA4418RBG-20IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

8MX18

8M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

.45 ns

R1Q5A7236ABG-33IS

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QFA7218ABB-19IT0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QFA7236ABB-20IT0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QEA4418RBG-19IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

8MX18

8M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

17 mm

.45 ns

R1QEA7236ABG-22IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX36

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QJA7218ABG-25RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.55 ns

R1QFA3618CBB-22IB

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2MX18

2M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

RMQCLA3636DGBA-252#AC0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX36

1M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.45 ns

R1QBA4418RBG-20IB0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

8MX18

8M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

17 mm

.45 ns

R1QCA7218ABG-20IT

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

15 mm

75497472 bit

1.7 V

17 mm

.45 ns

R1QEA7236ABB-22RB

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QMA3636CBB-25RT

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

1MX36

1M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

15 mm

.55 ns

R1QCA7218ABB-20IS0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

4MX18

4M

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

R1QBA7236ABB-22RA

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX36

2M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

HM6AEB9404BP40

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

9

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX9

4M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

1.9 V

1.46 mm

15 mm

Not Qualified

37748736 bit

1.7 V

e0

17 mm

.45 ns

R1QLA4418RBG-25IA0

Renesas Electronics

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

8MX18

8M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

400 MHz

15 mm

Not Qualified

150994944 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

17 mm

.45 ns

R1QFA7218ABB-20RS

Renesas Electronics

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX18

4M

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.4 mm

13 mm

75497472 bit

1.7 V

15 mm

.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.