DDR SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
UPD44164094AF5-E40-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX9	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.28 Amp	15 mm	.45 ns
UPD44324182BF5-E33-FQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.4 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.41 Amp	17 mm	.45 ns
UPD44164185AF5-E40Y-EQ2-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.3 Amp	15 mm	.45 ns
UPD44324185BF5-E50-FQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	420 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	200 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.35 Amp	17 mm	.45 ns
UPD44164082AF5-E50-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	470 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX8	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.26 Amp	15 mm	.45 ns
UPD46364182BF1-E40-EQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		15 mm	.45 ns
UPD44164184BF5-E35Y-EQ3-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	287 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE				.51 Amp	15 mm	.45 ns
UPD44324085F5-E40Y-EQ2-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX8	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	250 MHz	13 mm	Not Qualified	33554432 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.55 Amp	15 mm	.45 ns
UPD44324185BF5-E40Y-FQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	630 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.5 Amp	17 mm	.45 ns
UPD44324182F5-E50Y-EQ2-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	860 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM	S-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	37748736 bit	1.7 V					.45 Amp	15 mm	.45 ns
UPD44324365BF5-E50Y-FQ1	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	620 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	200 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.49 Amp	17 mm	.45 ns
UPD44324182BF5-E40Y-FQ1	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	560 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.4 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.5 Amp	17 mm	.45 ns
UPD46184095BF1-E33Y-EQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX9	2M	1.7 V	-40 Cel	TIN BISMUTH	BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e6			.51 Amp	15 mm	.45 ns
UPD46184184BF1-E33Y-EQ1	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	560 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.52 Amp	15 mm	.45 ns
UPD46184362BF1-E33Y-EQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	640 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.7 V	-40 Cel	TIN BISMUTH	BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e6			.55 Amp	15 mm	.45 ns
UPD44324365BF5-E33-FQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.42 Amp	17 mm	.45 ns
UPD44324182BF5-E50-FQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	390 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	200 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.35 Amp	17 mm	.45 ns
UPD46364092BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX9	4M		0 Cel	TIN BISMUTH	BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns
UPD48288118AF1-E18-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			TIN BISMUTH	BOTTOM	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	IT ALSO OPERATES AT 2.5V	e6				18.5 mm
UPD44324362F5-E50-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	1048576 words	COMMON	1.8	1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	37748736 bit	1.7 V		e1			.4 Amp	15 mm	.45 ns
UPD44324092BF5-E35-FQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	287 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.38 Amp	17 mm	.45 ns
UPD44164185BF5-E50Y-EQ3	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44324082F5-E40-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX8	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B165		1.9 V	1.51 mm	250 MHz	13 mm	Not Qualified	33554432 bit	1.7 V		e1			.5 Amp	15 mm	.45 ns
UPD44324182BF5-E35Y-FQ1	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	590 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.4 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	287 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.52 Amp	17 mm	.45 ns
UPD44324092BF5-E40Y-FQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	540 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX9	4M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.49 Amp	17 mm	.45 ns
UPD44324185F5-E37-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	970 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	270 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.52 Amp	15 mm	.45 ns
UPD46184362BF1-E40Y-EQ1	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.52 Amp	15 mm	.45 ns
UPD44324362BF5-E35-FQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	287 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.42 Amp	17 mm	.45 ns
UPD44164094AF5-E50-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX9	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.26 Amp	15 mm	.45 ns
UPD44164364AF5-E50-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.26 Amp	15 mm	.45 ns
UPD44324362BF5-E40-FQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.4 Amp	17 mm	.45 ns
UPD44324185F5-E50-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.4 Amp	15 mm	.45 ns
UPD46184362BF1-E33-EQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.43 Amp	15 mm	.45 ns
UPD44164185BF5-E33-EQ3-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44164185AF5-E50Y-EQ2-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.28 Amp	15 mm	.45 ns
UPD44324092F5-E40-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B165		1.9 V	1.51 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V		e1			.5 Amp	15 mm	.45 ns
UPD44324362BF5-E35Y-FQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	630 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm	287 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE				.54 Amp	17 mm	.45 ns
UPD44324092F5-E37-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	690 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B165		1.9 V	1.51 mm	270 MHz	13 mm	Not Qualified	37748736 bit	1.7 V		e1			.52 Amp	15 mm	.45 ns
UPD44164184AF5-E50Y-EQ2-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.26 Amp	15 mm	.45 ns
UPD44164184BF5-E40Y-EQ3-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44164362AF5-E33-EQ2-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	610 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.51 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.3 Amp	15 mm	.45 ns
UPD44164182BF5-E50-EQ3	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44164182BF5-E50Y-EQ3	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD46364092BF1-E33Y-EQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX9	4M		-40 Cel	TIN BISMUTH	BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V		e6				15 mm	.45 ns
UPD44164185BF5-E40Y-EQ3	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44164095BF5-E50-EQ3	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX9	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44164185BF5-E50-EQ3-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
UPD44164082AF5-E37Y-EQ2-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX8	2M	1.7 V	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B165	1	1.9 V	1.51 mm	270 MHz	13 mm	Not Qualified	16777216 bit	1.7 V		e3				15 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.