DDR SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K7J163682B-EC200	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.19 Amp	15 mm	.45 ns
K7J161882B-FI200	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.19 Amp	15 mm	.45 ns
K7J641882M-FC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165	1	1.9 V	1.4 mm	166 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.5 ns
K7I161884B-EC250	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED	.21 Amp	15 mm	.45 ns
K7J321882M-FC250	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.45 ns
K7J643682M-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				17 mm	.45 ns
K7J323682M-FC25	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.25 Amp	17 mm	.45 ns
K7J161882B-FC16	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	166.66 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.14 Amp	15 mm	.5 ns
K7K1618T2C-FI400	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	1048576 words	COMMON	1.8	1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.35 Amp	15 mm	.45 ns
K7I641882M-EI160	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.5 ns
K7D161871M-HC33	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.55 mm	333 MHz	14 mm	Not Qualified	18874368 bit	2.37 V		e0			.15 Amp	22 mm	1.7 ns
K7I163682B-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.21 Amp	15 mm	.45 ns
K7J161882B-EC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	166 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.17 Amp	15 mm	.5 ns
K7I161882B-FI30T	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165	1	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE				.23 Amp	15 mm	.45 ns
K7I641882M-EI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1				17 mm	.45 ns
K7D321874C-GC400	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	COMMON	2.5	1.8/2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B153	2	2.6 V	2.21 mm	400 MHz	14 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.3 Amp	22 mm
K7I321882M-FC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.5 ns
K7J641882M-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				17 mm	.45 ns
K7D163671M-HC37	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.55 mm	370 MHz	14 mm	Not Qualified	18874368 bit	2.37 V		e0				22 mm	1.7 ns
K7J161882B-FC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165	1	1.9 V	1.4 mm	166 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE				.17 Amp	15 mm	.5 ns
K7K3236U2C-FC330	Samsung	DDR SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	1048576 words	COMMON		1.5/1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165	3			333 MHz		Not Qualified	37748736 bit					240	.3 Amp		.45 ns
K7J160882B-FC33	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX8	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE	e0				15 mm	.45 ns
K7I161882B-FC25	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.18 Amp	15 mm	.45 ns
K7J160882B-FC16	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX8	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	166.66 MHz	13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.14 Amp	15 mm	.5 ns
K7D801871B-HC37	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	830 mA	524288 words	COMMON	2.5	1.5,2.5	18	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.21 mm	370 MHz	14 mm	Not Qualified	9437184 bit	2.37 V	PIPELINED ARCHITECTURE	e0			.15 Amp	22 mm	.2 ns
K7K3218U2C-EI330	Samsung	DDR SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	2097152 words	COMMON		1.5/1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165	3			333 MHz		Not Qualified	37748736 bit					260	.3 Amp		.45 ns
K7K3218T2C-EI400	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	2097152 words	COMMON	1.8	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.35 Amp	17 mm	.45 ns
K7I323682C-FI300	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.28 Amp	17 mm	.45 ns
K7I163684B-EC200	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.19 Amp	15 mm	.45 ns
K7I323684M-FC16	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	166.66 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.16 Amp	17 mm	.5 ns
K7I323684M-FC200	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.45 ns
K7J641882M-EC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm		15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1				17 mm	.5 ns
K7I321884M-FC25	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	560 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.2 Amp	17 mm	.45 ns
K7D163671M-HC40	Samsung	DDR SRAM	COMMERCIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA153,9X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.37 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B153		2.63 V	2.55 mm	400 MHz	14 mm	Not Qualified	18874368 bit	2.37 V		e0				22 mm	1.6 ns
K7I321884C-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.25 Amp	17 mm	.45 ns
K7I643682M-FC160	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	166 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.5 ns
K7K1618T2C-FC330	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	1048576 words	COMMON	1.8	1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		240	.3 Amp	15 mm	.45 ns
K7J161882B-EC300	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1				15 mm	.45 ns
K7I641882M-EI200	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE					17 mm	.45 ns
K7I160882B-FC250	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX8	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE					15 mm	.45 ns
K7I643684M-EC250	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1				17 mm	.45 ns
K7I323684C-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.25 Amp	17 mm	.45 ns
K7K3236T2C-FC400	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	1048576 words	COMMON	1.8	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0		240	.35 Amp	17 mm	.45 ns
K7J163682B-EC300	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm		13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1				15 mm	.45 ns
K7I321884C-EC300	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1			.28 Amp	17 mm	.45 ns
K7I641882M-EI300	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	2	1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1				17 mm	.45 ns
K7K3218U2C-FI400	Samsung	DDR SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	2097152 words	COMMON		1.5/1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165	3			400 MHz		Not Qualified	37748736 bit					240	.35 Amp		.45 ns
K7I161884B-FI250	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.21 Amp	15 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.