NON-VOLATILE SRAM SRAM 1,158

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14E256LA-SZ25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	25 ns
CY14B116L-ZS25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		16777216 bit	2.7 V				260			18.415 mm	25 ns
CY14B101Q2-LHXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V		e4	30	260	NO	.005 Amp	6 mm
CY14B256LA-SZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V			20	260		.005 Amp	20.726 mm	45 ns
CY14E256LA-SZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	25 ns
CY14B104NA-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e1	20	260		.005 Amp	10 mm	25 ns
CY14B116L-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		16777216 bit	2.7 V				260			18.415 mm	25 ns
CY14B104NA-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e1	20	260		.005 Amp	10 mm	25 ns
CY14B108M-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	20	260		.01 Amp	22.415 mm	45 ns
CY14V116N-BZ30XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V		e1		260			17 mm	30 ns
DS1995L-F5	Maxim Integrated	NON-VOLATILE SRAM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words		5		1	DISK BUTTON				70 Cel		16KX1	16K		-40 Cel		END		O-MEDB-N2		6 V				Not Qualified	16384 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED
DS1995L-F5+	Analog Devices	NON-VOLATILE SRAM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words		5		1	DISK BUTTON				70 Cel		16KX1	16K		-40 Cel	Matte Tin (Sn) - annealed	END		O-MEDB-N2		6 V				Not Qualified	16384 bit	2.8 V		e3
CY14B101Q2-LHXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V		e4	30	260	NO	.005 Amp	6 mm
CY14E256LA-SZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	45 ns
CY14B256LA-SZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.005 Amp	20.726 mm	45 ns
CY14V104NA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	262144 words	COMMON	3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	45 ns
CY14B256LA-SZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.005 Amp	20.726 mm	25 ns
CY14E256LA-SZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	45 ns
CAT24C44VI-GT3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e4	30	260		.00003 Amp	4.9 mm
CY14B101LA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	SRAMs	.635 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	15.875 mm	25 ns
CY14V101LA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
CAT24C44VI-G	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e4		260		.00003 Amp	4.9 mm	375 ns
CY14B108M-ZSP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	20	260		.01 Amp	22.415 mm	45 ns
CAT24C44VI-T3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3	30	260		.00003 Amp	4.9 mm
CAT24C44VI-TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		16X16	16		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3					4.9 mm	375 ns
CAT24C44VIT3	Catalyst Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		16X16	16		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3					4.9 mm
CY14V104NA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	262144 words	COMMON	3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	45 ns
CAT24C44VI	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3		260		.00003 Amp	4.9 mm	375 ns
CY14B101LA-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	45 ns
M48Z58Y-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
CY14B256LA-SZ25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V			20	260		.005 Amp	20.726 mm	25 ns
CY14V116N-BZ30XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V		e1		260			17 mm	30 ns
CY14V101LA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
CY14B101LA-ZS45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	45 ns
CY14B101LA-SZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	20.726 mm	45 ns
CY14B101LA-SZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	20.726 mm	45 ns
CY14V101QS-SF108XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V		e4		260			10.2865 mm
X2212D	Xicor	NON-VOLATILE SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T18		5.5 V				Not Qualified	1024 bit	4.5 V		e0			NO			300 ns
CY14B101PA-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V		e3	40	260		.00025 Amp	10.2865 mm
CY14B104LA-ZS25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	25 ns
CY14B101PA-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V		e3	40	260		.00025 Amp	10.2865 mm
CY14E101J2-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
CY14B256LA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	30	260		.005 Amp	15.875 mm	45 ns
CY14B101Q2A-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.00015 Amp	4.889 mm
CY14B104LA-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	45 ns
CY14B108N-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	20	260		.01 Amp	22.415 mm	25 ns
CY14V101NA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	65536 words		3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		64KX16	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
X2004J-25	Xicor	NON-VOLATILE SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	NMOS	J BEND	PARALLEL	ASYNCHRONOUS		512 words		5	5	8	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	512X8	512		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQCC-J32		5.25 V				Not Qualified	4096 bit	4.75 V		e0			YES			250 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.