OTHER SRAM SRAM 32

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8685923YA	Defense Logistics Agency	OTHER SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e0					27.555 mm	35 ns
5962-8685909LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0					32.004 mm	35 ns
5962-8685904LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0					32.004 mm	70 ns
5962-8685908LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0					32.004 mm	45 ns
5962-8685910LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0					32.004 mm	35 ns
5962-8685924YA	Defense Logistics Agency	OTHER SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e0					27.555 mm	35 ns
5962-8685906XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm	11.4554 mm	Qualified	65536 bit	4.5 V	e0					11.4554 mm	55 ns
5962-8685905XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm	11.4554 mm	Qualified	65536 bit	4.5 V	e0					11.4554 mm	55 ns
CY7C199-1XW14	Infineon Technologies	OTHER SRAM
5962-3829407MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.015 Amp	37.1475 mm	70 ns
5962-3829411MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.1475 mm	45 ns
5962-3829412MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.1475 mm	35 ns
5962-3829417MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.211 mm	20 ns
5962-3829416MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.1475 mm	20 ns
5962-3829410MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.1475 mm	45 ns
5962-3829414MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.1475 mm	25 ns
5962-3829406MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V	e0		240		.0003 Amp		70 ns
5962-3829410MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V	e0		240		.0003 Amp		45 ns
5962-3829413MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V	e0		240		.02 Amp		35 ns
5962-3829407MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0	20	240	YES	.015 Amp	37.211 mm	70 ns
5962-3829409MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.211 mm	55 ns
5962-3829412MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V	e0		240		.0003 Amp		35 ns
5962-3829417MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.1475 mm	20 ns
5962-3829414MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.211 mm	25 ns
5962-3829408MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T28	1	5.5 V			Qualified	65536 bit	4.5 V	e0		240		.0003 Amp		55 ns
5962-3829406MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.1475 mm	70 ns
5962-3829413MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.1475 mm	35 ns
5962-3829415MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.211 mm	25 ns
5962-3829416MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.211 mm	20 ns
5962-3829415MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.1475 mm	25 ns
5962-3829411MXA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.02 Amp	37.211 mm	45 ns
5962-3829408MZA	Renesas Electronics	OTHER SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V	e0		240	YES	.0003 Amp	37.1475 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.