QDR II SRAM SRAM 126

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Output Enable	Length	Maximum Access Time
R1Q2A7236ABG-670IS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		2MX36	2M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-780RA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-610IT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		2MX36	2M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABB-40IB0	Renesas Electronics	QDR II SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	NO	15 mm	.45 ns
R1Q2A7236ABB-40IB1	Renesas Electronics	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm		75497472 bit	1.7 V	NO	15 mm	.45 ns
R1Q2A7236ABG-710RS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		2MX36	2M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-670RA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		2MX36	2M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q3A7218ABB-33IB	Renesas Electronics	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V		15 mm	.45 ns
R1Q2A7236ABG-710IA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		2MX36	2M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7209ABG-510IT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	8388608 words	SEPARATE	1.8		9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		8MX9	8M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7209ABG-570RS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	8388608 words	SEPARATE	1.8		9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		8MX9	8M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-870RS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-710RT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		2MX36	2M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-830RB	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-830RS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7209ABG-510RB	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	8388608 words	SEPARATE	1.8		9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		8MX9	8M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-870RA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-780IA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		4MX18	4M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7209ABG-510RA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	8388608 words	SEPARATE	1.8		9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		8MX9	8M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-780IB	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		4MX18	4M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7209ABG-570IS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	8388608 words	SEPARATE	1.8		9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		8MX9	8M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-870IS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		4MX18	4M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-830RT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-780IT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		4MX18	4M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-830IT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		4MX18	4M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-710IB	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		2MX36	2M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-610IS	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel		2MX36	2M	1.7 V	-40 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7218ABG-870RT	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4194304 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		4MX18	4M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-710RA	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		2MX36	2M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns
R1Q2A7236ABG-710RB	Renesas Electronics	QDR II SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2097152 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel		2MX36	2M	1.7 V	0 Cel	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V	NO	17 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.