119 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71T75802S200BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	2.38 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	200 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	22 mm	3.2 ns
71V25761S183BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel			128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.3 ns
71V65803S100BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	5 ns
71V65603S133BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.06 Amp	22 mm	4.2 ns
71V67602133BGGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	85 Cel		3-STATE	256KX36	256K	3.135 V	-40 Cel		BOTTOM	1	R-PBGA-B119		3.465 V	2.36 mm	133 MHz	14 mm		9437184 bit	3.135 V					YES	.07 Amp	22 mm	4.2 ns
71V3579SA85BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V		87 MHz		Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	30	260		.035 Amp		8.5 ns
71V67903S75BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.05 Amp	22 mm	7.5 ns
UPD461336-55LS1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	COMMON	3.3	3.3,1.2	36	GRID ARRAY	BGA119(UNSPEC)	16	SRAMs		70 Cel		3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.45 V		182 MHz		Not Qualified	1179648 bit	3.15 V		e0						3.25 ns
71V3579SA80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V		100 MHz		Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	30	260		.03 Amp		8 ns
IDT71V2556XSA133BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	85 Cel			128KX36	128K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	4.2 ns
IDT71V65903S80BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.06 Amp	22 mm	8 ns
IDT71V65603S133BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	22 mm	4.2 ns
71V2556SA100BGG	Renesas Electronics	ZBT SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50			1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	5 ns
IDT71T75802S166BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	245 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	2.38 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	166 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	22 mm	3.5 ns
IDT71V35761SA183BGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
IDT71V67602S166BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel			256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
IDT71V3558S166BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			166 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260		.045 Amp	22 mm	3.5 ns
71V67803Z133BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel			512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	4.2 ns
IDT71V3558XS166BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			166 MHz		Not Qualified	4718592 bit			e0	20	225		.045 Amp		3.5 ns
IDT71V65903S75BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.06 Amp	22 mm	7.5 ns
71V2556S100BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.045 Amp	22 mm	5 ns
71V3556XSA133BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			133 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260		.045 Amp	22 mm	4.2 ns
UPD464318ALS1-A5	Renesas Electronics	LATE-WRITE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		BICMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	262144 words	COMMON		1.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm			3-STATE	256KX18	256K	3.15 V		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	4718592 bit			e0				.000055 Amp		2.5 ns
71V67803ZS150BG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			150 MHz		Not Qualified	9437184 bit			e0	20	225		.05 Amp		3.8 ns
IDT71V3558XSA133BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			133 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260		.04 Amp	22 mm	4.2 ns
IDT71V3558XSA166BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			166 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260		.04 Amp	22 mm	3.5 ns
71V65803Z133BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	524288 words		3.3		18	GRID ARRAY				1.27 mm	85 Cel			512KX18	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		9437184 bit	3.135 V	PIPELINED ARCHITECTURE		30	260			22 mm	4.2 ns
71V2556XSA133BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel			128KX36	128K		0 Cel		BOTTOM		X-PBGA-B119		3.465 V			14 mm		4718592 bit	3.135 V							22 mm	4.2 ns
71V3558SA133BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.04 Amp	22 mm	4.2 ns
71V3557S75BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			100 MHz		Not Qualified	4718592 bit			e0	20	225		.04 Amp		7.5 ns
71V2556XSA166BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel			128KX36	128K		0 Cel		BOTTOM		X-PBGA-B119		3.465 V			14 mm		4718592 bit	3.135 V							22 mm	3.5 ns
71V65803S150BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	22 mm	3.8 ns
71V3556SA100BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.04 Amp	22 mm	5 ns
IDT71T75802S133BGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	215 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.045 Amp	22 mm	4.2 ns
71V3558S200BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			200 MHz		Not Qualified	4718592 bit			e1	30	260		.04 Amp		3.2 ns
IDT71V3579SA80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel			256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					22 mm	8 ns
IDT71T75602S150BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	215 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	150 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	22 mm	3.8 ns
IDT71V3556XSA133BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.045 Amp	22 mm	4.2 ns
71V3556S166BGG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.04 Amp	22 mm	3.5 ns
IDT71V2556XS100BG	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel			128KX36	128K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	5 ns
IDT71V2556SA166BG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	22 mm	3.5 ns
71V2556XS166BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.045 Amp	22 mm	3.5 ns
IDT71V3558SA133BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3			133 MHz	14 mm	Not Qualified	4718592 bit			e1	30	260		.045 Amp	22 mm	4.2 ns
71V25761SA183BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel			128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.3 ns
IDT71V257785BGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	131072 words	COMMON		2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			87 MHz		Not Qualified	4718592 bit			e0	20	225		.035 Amp		8.5 ns
IDT71V3577S85BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel		3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	22 mm	8.5 ns
71V3577S80BGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	NO	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e0	20	225	YES	.035 Amp	22 mm	8 ns
71V67803133BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel			512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.