120 SRAM 78

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7052S25PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260	YES	.015 Amp	14 mm	25 ns
IDT7052L25PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e0	30	240			14 mm	25 ns
IDT7052L25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260	YES		14 mm	25 ns
IDT7052L35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e3					14 mm	35 ns
IDT7052L25PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e3	40	260		.0006 Amp	14 mm	25 ns
IDT7052L35PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e0				.0018 Amp		35 ns
IDT7052S35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e3					14 mm	35 ns
IDT7052S25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260	YES		14 mm	25 ns
IDT7052S25PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e3				.03 Amp		25 ns
IDT7052S35PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e0				.03 Amp		35 ns
IDT7052S35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260	YES		14 mm	35 ns
IDT7052L20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260		.0006 Amp	14 mm	20 ns
IDT7052L45PF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	30	240	YES		14 mm	45 ns
IDT7052S45PF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	30	240	YES		14 mm	45 ns
IDT7052L35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e3				.0018 Amp		35 ns
IDT7052L20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260			14 mm	20 ns
IDT7052S25PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e0	30	240			14 mm	25 ns
IDT7052S25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e3	40	260		.03 Amp	14 mm	25 ns
IDT7052S20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260		.015 Amp	14 mm	20 ns
IDT7052S25PFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e0	30	240		.03 Amp	14 mm	25 ns
IDT7052L25PFM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e0				.0018 Amp		25 ns
IDT7052S35PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3				Not Qualified	16384 bit			e3				.03 Amp		35 ns
IDT7052L25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260		.0018 Amp	14 mm	25 ns
IDT7052L35PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e0	30	240			14 mm	35 ns
IDT7052S15PF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	30	240	YES		14 mm	15 ns
IDT7052L25PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V		e3					14 mm	25 ns
IDT7052S20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260			14 mm	20 ns
IDT7052L35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260	YES		14 mm	35 ns
IDT7052L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260			14 mm	25 ns
IDT7052S35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm	14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260	YES	.015 Amp	14 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.