Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
515 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e3 |
30 |
260 |
.015 Amp |
20 mm |
12 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.03 Amp |
20 mm |
3.6 ns |
|||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
515 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e0 |
30 |
225 |
.015 Amp |
20 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
Matte Tin (Sn) |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
e3 |
30 |
260 |
.015 Amp |
20 mm |
10 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
e3 |
30 |
260 |
.015 Amp |
20 mm |
10 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
515 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e0 |
30 |
225 |
.015 Amp |
20 mm |
12 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
515 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e0 |
30 |
225 |
.015 Amp |
20 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
16 |
FLATPACK |
70 Cel |
16KX16 |
16K |
0 Cel |
TIN |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
262144 bit |
3 V |
e3 |
260 |
9 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
335 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
83 MHz |
Not Qualified |
524288 bit |
e3 |
30 |
260 |
.015 Amp |
7.5 ns |
||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
16KX16 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
20 mm |
25 ns |
|||||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
32KX16 |
32K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE |
e0 |
20 mm |
12 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
290 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.015 Amp |
20 mm |
7.5 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
16KX18 |
16K |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
294912 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
22 mm |
9 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK |
85 Cel |
4KX8 |
4K |
-40 Cel |
QUAD |
R-PQFP-G128 |
5.5 V |
32768 bit |
4.5 V |
AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE |
25 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM MODULE |
COMMERCIAL |
128 |
QIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
4750 mA |
32768 words |
COMMON |
5 |
5 |
60 |
IN-LINE |
QI128,2.1/2.3,100 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX60 |
32K |
0 Cel |
TIN LEAD |
QUAD |
R-PQIP-P128 |
33 MHz |
Not Qualified |
1966080 bit |
e0 |
||||||||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
32768 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3.15 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
100 MHz |
Not Qualified |
589824 bit |
3.15 V |
e3 |
30 |
260 |
.015 Amp |
5 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
16 |
FLATPACK |
70 Cel |
16KX16 |
16K |
0 Cel |
QUAD |
R-PQFP-G128 |
3.6 V |
262144 bit |
3 V |
7.5 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
460 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
1179648 bit |
3.15 V |
PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE |
e3 |
30 |
260 |
.015 Amp |
20 mm |
4.2 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
QFF |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK |
.5 mm |
85 Cel |
4KX8 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-F128 |
3 |
5.5 V |
1.6 mm |
14 mm |
32768 bit |
4.5 V |
e0 |
20 mm |
20 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
4.2 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
395 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.005 Amp |
20 mm |
6.5 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
128 |
QFF |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
400 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP128,.67X.93,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
4 |
R-PQFP-F128 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE |
e0 |
.03 Amp |
20 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
18 |
FLATPACK |
.5 mm |
85 Cel |
32KX18 |
32K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
3.15 V |
PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE |
e3 |
20 mm |
6 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
QUAD |
R-PQFP-G128 |
3.45 V |
1.6 mm |
14 mm |
1179648 bit |
3.15 V |
20 mm |
5 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
1179648 bit |
3.15 V |
PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE |
e3 |
30 |
260 |
.03 Amp |
20 mm |
6 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
290 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
R-PQFP-G128 |
3 |
83 MHz |
Not Qualified |
262144 bit |
e0 |
30 |
225 |
.015 Amp |
7.5 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.003 Amp |
20 mm |
12 ns |
|||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP128,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
133 MHz |
Not Qualified |
2359296 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e3 |
.03 Amp |
4.2 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
260 mA |
32768 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP128,.63X.87,20 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.4 mm |
66 MHz |
14 mm |
Not Qualified |
589824 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
225 |
.003 Amp |
20 mm |
9 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
32768 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP128,.63X.87,20 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.4 mm |
83 MHz |
14 mm |
Not Qualified |
589824 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
225 |
.003 Amp |
20 mm |
7.5 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
32768 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP128,.63X.87,20 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.4 mm |
50 MHz |
14 mm |
Not Qualified |
589824 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
30 |
225 |
.003 Amp |
20 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
32KX18 |
32K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
3 V |
PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE |
e0 |
225 |
20 mm |
9 ns |
|||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
20 mm |
20 ns |
||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
20 mm |
25 ns |
||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
66 MHz |
Not Qualified |
1179648 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
9 ns |
||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
50 MHz |
Not Qualified |
1179648 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
12 ns |
||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
83 MHz |
Not Qualified |
1179648 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
7.5 ns |
||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
20 mm |
18 ns |
||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
20 mm |
20 ns |
||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
66 MHz |
Not Qualified |
1179648 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
9 ns |
||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
1048576 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
20 mm |
20 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
370 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
83 MHz |
Not Qualified |
262144 bit |
e3 |
30 |
260 |
.02 Amp |
7.5 ns |
||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
16 |
FLATPACK |
70 Cel |
32KX16 |
32K |
0 Cel |
QUAD |
R-PQFP-G128 |
3.6 V |
524288 bit |
3 V |
15 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX16 |
16K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.003 Amp |
20 mm |
12 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
4KX8 |
4K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE |
e3 |
20 mm |
20 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
16384 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
16KX16 |
16K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.005 Amp |
20 mm |
12 ns |
|||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
480 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP128,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
133 MHz |
Not Qualified |
2359296 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e3 |
.04 Amp |
4.2 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
125 Cel |
4KX8 |
4K |
-55 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE |
e3 |
20 mm |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.