132 SRAM 24

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7MB1008S55K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

620 mA

32768 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

32KX16

32K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

524288 bit

e0

.065 Amp

55 ns

7MB1006S55K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

900 mA

65536 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

1048576 bit

e0

.125 Amp

55 ns

7MB1008S45K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

620 mA

32768 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

32KX16

32K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

524288 bit

e0

.065 Amp

45 ns

7MB1006S45K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

900 mA

65536 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

1048576 bit

e0

.125 Amp

45 ns

IDT7052L45QE

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

45 ns

IDT7052S45QE

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

45 ns

IDT7052L45QEBG

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e3

YES

45 ns

UPD43608R-2

Renesas Electronics

CACHE SRAM

COMMERCIAL

132

PGA

SQUARE

CERAMIC

NO

CMOS

PIN/PEG

GRID ARRAY

PGA132,14X14

SRAMs

2.54 mm

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

PERPENDICULAR

S-XPGA-P132

Not Qualified

e0

IDT7052S35QEBG

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

-55 Cel

MATTE TIN

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e3

YES

35 ns

IDT7052L35QE

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

35 ns

IDT7052L25QE

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

25 ns

IDT7052S35QEB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

-55 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

35 ns

UPD43608R-3

Renesas Electronics

CACHE SRAM

COMMERCIAL

132

PGA

SQUARE

CERAMIC

NO

CMOS

PIN/PEG

GRID ARRAY

PGA132,14X14

SRAMs

2.54 mm

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

PERPENDICULAR

S-XPGA-P132

Not Qualified

e0

IDT7052S45QEBG

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

-55 Cel

MATTE TIN

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e3

YES

45 ns

IDT7052L35QEB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

35 ns

IDT7052S35QE

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

35 ns

IDT7052S45QEB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

-55 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

45 ns

IDT7052L35QEBG

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e3

YES

35 ns

IDT7MB1006S45K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

900 mA

65536 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

1048576 bit

e0

.125 Amp

45 ns

IDT7MB1008S55K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

620 mA

32768 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

32KX16

32K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

524288 bit

e0

.065 Amp

55 ns

IDT7MB1008S45K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

620 mA

32768 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

32KX16

32K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

524288 bit

e0

.065 Amp

45 ns

IDT7MB1006S55K

Renesas Electronics

MULTI-PORT SRAM MODULE

COMMERCIAL

132

QIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

900 mA

65536 words

COMMON

5

5

16

IN-LINE

QI132,2.1/2.3,100

SRAMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

QUAD

2

R-PQIP-P132

Not Qualified

1048576 bit

e0

.125 Amp

55 ns

IDT7052S25QE

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

70 Cel

3-STATE

2KX8

2K

0 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

25 ns

IDT7052L45QEB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

132

QCCJ

SQUARE

CERAMIC, GLASS-SEALED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2048 words

5

8

CHIP CARRIER

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

TIN LEAD

QUAD

4

S-GQCC-J132

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.