Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.667 mm |
7.4925 mm |
1048576 bit |
2.7 V |
e4 |
260 |
10.2865 mm |
|||||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
131072 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.667 mm |
7.4925 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
40 |
260 |
.00025 Amp |
10.2865 mm |
||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
131072 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.667 mm |
7.4925 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
40 |
260 |
.00025 Amp |
10.2865 mm |
||||||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.667 mm |
7.4925 mm |
1048576 bit |
2.7 V |
10.2865 mm |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
2.108 mm |
5.3085 mm |
64 bit |
4.5 V |
10.11 mm |
27 ns |
|||||||||||||||||||||||||||
National Semiconductor |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||
National Semiconductor |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
80 ns |
|||||||||||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
80 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
IN-LINE |
2.54 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
64 bit |
4.5 V |
19.305 mm |
27 ns |
|||||||||||||||||||||||||||
Signetics |
STANDARD SRAM |
COMMERCIAL |
16 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
4 |
IN-LINE |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
1 |
R-PDIP-T16 |
5.25 V |
Not Qualified |
1024 bit |
4.75 V |
NO |
400 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.753 mm |
3.899 mm |
64 bit |
4.5 V |
9.902 mm |
27 ns |
|||||||||||||||||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
65536 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.336 mm |
7.4925 mm |
Not Qualified |
524288 bit |
2.7 V |
e3 |
.00025 Amp |
10.2865 mm |
||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
65536 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.667 mm |
7.4925 mm |
Not Qualified |
524288 bit |
2.7 V |
e3 |
260 |
.00025 Amp |
10.2865 mm |
|||||||||||||||||
Fairchild Semiconductor |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
SEPARATE |
5 |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX1 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T16 |
2A |
5.5 V |
Not Qualified |
1024 bit |
4.5 V |
e0 |
250 ns |
||||||||||||||||||||||
National Semiconductor |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
90 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
5 |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
50 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
TTL |
MIL-PRF-38535 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
Other Memory ICs |
2.54 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T16 |
5.25 V |
5.08 mm |
35 MHz |
7.62 mm |
Qualified |
16 bit |
4.75 V |
e0 |
NO |
.05 Amp |
21.34 mm |
45 ns |
||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
MIL-STD-883 Class B (Modified) |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
90 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
SEPARATE |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX1 |
1K |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
650 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
1 |
TTL |
FLAT |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
FLATPACK |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-55 Cel |
DUAL |
1 |
R-GDFP-F16 |
5.5 V |
2.03 mm |
6.73 mm |
Not Qualified |
16 bit |
4.5 V |
NO |
10.2 mm |
45 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
1 |
TTL |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
FLATPACK |
FL16,.3 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-GDFP-F16 |
5.5 V |
2.03 mm |
6.73 mm |
Qualified |
16 bit |
4.5 V |
10.16 mm |
45 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
256X4 |
256 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
1 |
TTL |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
1 |
FLATPACK |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
16X1 |
16 |
-55 Cel |
DUAL |
1 |
R-GDFP-F16 |
5.5 V |
2.03 mm |
6.73 mm |
Not Qualified |
16 bit |
4.5 V |
NO |
10.2 mm |
40 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X1 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-55 Cel |
DUAL |
R-GDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Qualified |
16 bit |
4.5 V |
NOT APPLICABLE |
NOT APPLICABLE |
19.56 mm |
45 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
1 |
IN-LINE |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X1 |
16 |
-55 Cel |
DUAL |
1 |
R-GDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16 bit |
4.5 V |
NO |
19.56 mm |
40 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
1 |
IN-LINE |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X1 |
16 |
-55 Cel |
DUAL |
1 |
R-GDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16 bit |
4.5 V |
NO |
19.56 mm |
40 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
256 words |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
256X1 |
256 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
||||||||||||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
90 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
1000 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
OTHER |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL |
-5.2 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
-5.2 |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
85 Cel |
256X1 |
256 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
35 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
MIL-STD-883 Class B (Modified) |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
5 |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
50 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
OTHER |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
103 mA |
64 words |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
85 Cel |
64X1 |
64 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
15 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
50 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
81 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
90 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
FLAT |
PARALLEL |
ASYNCHRONOUS |
16 words |
1 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
16X1 |
16 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
TTL |
FLAT |
PARALLEL |
ASYNCHRONOUS |
64 words |
4 |
FLATPACK |
FL16,.3 |
SRAMs |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
64X4 |
64 |
-55 Cel |
DUAL |
R-XDFP-F16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.