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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT3LST6464PG-66	Micron Technology	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	585 mA	65536 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.6 V		66 MHz		Not Qualified	4194304 bit	3.135 V	32K X 8 TAG		YES	.013 Amp		7 ns
MCM64PC64TSG66	NXP Semiconductors	CACHE TAG SRAM MODULE	OTHER	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	705 mA	65536 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	85 Cel	3-STATE	64KX64	64K	3.14 V	-10 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.505 Amp		8 ns
MCM64PE32TDG66	NXP Semiconductors	CACHE TAG SRAM MODULE		160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	545 mA	32768 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm		3-STATE	32KX64	32K	3.14 V			DUAL		R-PDMA-N160			66 MHz		Not Qualified	2097152 bit					.245 Amp		8 ns
MCM64PE32SDG66	NXP Semiconductors	CACHE TAG SRAM MODULE	OTHER	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	635 mA	32768 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	85 Cel	3-STATE	32KX64	32K	3.14 V	-10 Cel		DUAL		R-PDMA-N160			66 MHz		Not Qualified	2097152 bit					.18 Amp		8 ns
MCM64PE64SDG66	NXP Semiconductors	CACHE TAG SRAM MODULE	OTHER	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	700 mA	65536 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	85 Cel	3-STATE	64KX64	64K	3.14 V	-10 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.22 Amp		8 ns
7MBV4152-66	Renesas Electronics	ZBT SRAM	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	18874368 bit			e0		.1 Amp
7MBV4151-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	18874368 bit			e0		.1 Amp
7MBV4150-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			100 MHz		Not Qualified	8388608 bit			e0		.06 Amp
7MBV4152-100	Renesas Electronics	ZBT SRAM	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			100 MHz		Not Qualified	18874368 bit			e0		.1 Amp
7MBV4150-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	8388608 bit			e0		.06 Amp
7MBV4151-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			100 MHz		Not Qualified	18874368 bit			e0		.1 Amp
IDT7MBV4150-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	8388608 bit			e0		.06 Amp
IDT7MBV4151-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			100 MHz		Not Qualified	18874368 bit			e0		.1 Amp
IDT7MBV4151-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	18874368 bit			e0		.1 Amp
IDT7MBV4152-66	Renesas Electronics	ZBT SRAM	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	18874368 bit			e0		.1 Amp
IDT7MPV6274S66M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	SERIES-RESISTOR	64KX64	64K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-N160	3.6 V				Not Qualified	4194304 bit	3.146 V	16K X 8 CACHE TAG	e0	YES			8 ns
IDT7MBV4152-100	Renesas Electronics	ZBT SRAM	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			100 MHz		Not Qualified	18874368 bit			e0		.1 Amp
IDT7MBV4150-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			100 MHz		Not Qualified	8388608 bit			e0		.06 Amp
IDT7MPV6273S66M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	SERIES-RESISTOR	32KX64	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-N160	3.6 V				Not Qualified	2097152 bit	3.146 V	8K X 8 CACHE TAG	e0	YES			8 ns
KMM764V72G7-13	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	65536 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.02 Amp		7 ns
KMM764V41AG7-15	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N160			66 MHz		Not Qualified	2097152 bit					.01 Amp		7 ns
KMM764V80G-13	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.01 Amp		7 ns
KMM764V80G-15	Samsung	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	3.3,5	8	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160	3.6 V	28.702 mm		5.461 mm	Not Qualified	524288 bit	3.13 V	ALSO OPERATES AT 5 V TYP			.01 Amp	110.236 mm	15 ns
KMM764V41AG2-13	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	400 mA	32768 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N160			76 MHz		Not Qualified	2097152 bit					.01 Amp		7 ns
KMM764V72G2-13	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	65536 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.02 Amp		7 ns
KMM764V41AG7-13	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	400 mA	32768 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N160			76 MHz		Not Qualified	2097152 bit					.01 Amp		7 ns
KMM764V41AG2-15	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N160			66 MHz		Not Qualified	2097152 bit					.01 Amp		7 ns
KMM764V72G2-15	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	720 mA	65536 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.02 Amp		8 ns
KMM764V72G7-15	Samsung	CACHE TAG SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	720 mA	65536 words	COMMON		3.3,5	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX64	64K	3.14 V	0 Cel		DUAL		R-PDMA-N160					Not Qualified	4194304 bit					.02 Amp		8 ns
MT2LSYT3264C4G-8L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			8 ns
MT2LSYT3264T6G-5P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	720 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V			YES	.004 Amp		5 ns
MT4LSYT6472B2G-11P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	64KX72	64K		0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			11 ns
MT2LSYT3272B2G-10L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2359296 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			10 ns
MT4LSY6472T2G-9	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1000 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	4718592 bit	3.135 V			YES	.02 Amp		9 ns
MT2LSYT3264T4G-8	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	450 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V			YES	.01 Amp		8 ns
MT2LSYT3264C4G-7L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			7 ns
MT2LSYT3272T4G-5L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2359296 bit	3.135 V			YES			5 ns
MT4LSYT6472T4G6L	Micron Technology	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1200 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	2 V	0 Cel		DUAL		R-PDMA-N160					Not Qualified	4718592 bit							6 ns
MT2LSYT3264T1G-12L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	450 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V			YES			12 ns
MT2LSYT3264T1G-9P	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V			YES	.004 Amp		9 ns
MT2LSYT3264C4G-5P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX64	32K		0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			5 ns
MT2LSYT3264T6G-5L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	720 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V			YES			5 ns
MT2LSYT3264T4G-7	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	540 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2097152 bit	3.135 V			YES	.01 Amp		7 ns
MT2LSYT3272T4G-7	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	600 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2359296 bit	3.135 V			YES	.01 Amp		7 ns
MT4LSYT6472C4G-8P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	64KX72	64K		0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE		YES			8 ns
MT2LSYT3272T4G-6L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	700 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2359296 bit	3.135 V			YES			6 ns
MT2LSYT3272T6G-6	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	700 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	3.14 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2359296 bit	3.135 V			YES	.01 Amp		6 ns
MT2LSYT3272T4G-8L	Micron Technology	CACHE SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V				Not Qualified	2359296 bit	3.135 V			YES			8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.