165 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
R1QEA3636CBB-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1110 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165	3			533 MHz		Not Qualified	37748736 bit					.96 Amp		.45 ns
R1QEA3636CBB-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1060 mA	1048576 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165				500 MHz		Not Qualified	37748736 bit					.92 Amp		.45 ns
R1Q5A7218ABG-40IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1QCA7236ABB-20IS0	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1Q4A4418RBG-40IS	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		8MX18	8M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V					17 mm	.45 ns
R1QEA3618CBB-19IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1030 mA	2097152 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165				533 MHz		Not Qualified	37748736 bit					.87 Amp		.45 ns
R1QFA7218ABB-19RB	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
HM6AEB18202BPL50	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		15 mm	Not Qualified	37748736 bit	1.7 V	e0				17 mm	.45 ns
R1QEA4436RBG-20RS	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX36	4M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V					17 mm	.45 ns
R1QFA7218ABG-19RS0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1QBA7236ABG-19RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1QKA7218ABG-25RB	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.55 ns
R1QFA7236ABB-20RA0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1Q5A7236ABB-30RT	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1Q2A7209ABB-40RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		9	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		8MX9	8M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1Q3A4436RBG-33RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX36	4M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V					17 mm	.45 ns
R1QCA7236ABB-19RT0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1QAA7236ABB-19RS	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1QCA3618CBB-19RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V					15 mm	.45 ns
R1Q4A4436RBG-33IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX36	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V					17 mm	.45 ns
R1QBA7218ABG-19IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
HM6AEB18204BP33	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165		1.9 V	1.46 mm		15 mm	Not Qualified	37748736 bit	1.7 V	e0				17 mm	.45 ns
R1Q3A3636ABG-50R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165				200 MHz		Not Qualified	37748736 bit					.34 Amp		.45 ns
R1QCA7236ABG-22IT0	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1Q2A7218ABB-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	890 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit							.45 ns
R1QBA4436RBG-22RT	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		4MX36	4M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V					17 mm	.45 ns
R1QAA7236ABG-22RA	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1QDA7218ABG-20IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1Q5A3609ABG-50R	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	4194304 words	COMMON		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel		BOTTOM	R-PBGA-B165				200 MHz		Not Qualified	37748736 bit					.28 Amp		.45 ns
R1Q2A4418RBG-40IA0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	830 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	8MX18	8M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.61 Amp	17 mm	.45 ns
RMQS2A3618DGBA-402#AC0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V					15 mm	.45 ns
R1Q6A7218ABB-33IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1QCA7236ABG-19RA0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1Q4A7236ABG-33IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1QCA7236ABB-20RT0	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		2MX36	2M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
71P79804250BQI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	1048576 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel		BOTTOM	R-PBGA-B165				250 MHz		Not Qualified	18874368 bit					.41 Amp		.45 ns
R1QAA3618CBB-20IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V					15 mm	.45 ns
R1QEA3618CBB-20IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V					15 mm	.45 ns
RMQS2A1818DGBA-402#AC0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		18874368 bit	1.7 V					15 mm	.45 ns
R1QDA3618CBB-22IS	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX18	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V					15 mm	.45 ns
R1QNA4436RBG-33IT	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX36	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V					17 mm
R1QBA3636CBG-19RT	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		37748736 bit	1.7 V					17 mm	.45 ns
R1Q6A7218ABB-40IA0	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1QEA7236ABB-20IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1Q5A7236ABG-33IA	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		15 mm		75497472 bit	1.7 V					17 mm	.45 ns
R1QBA3636CBB-20IT	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V					15 mm	.45 ns
R1Q5A7218ABB-33IT0	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		4MX18	4M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns
R1QFA7236ABB-22IB	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel		BOTTOM	R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V					15 mm	.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.