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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C2564-15LP	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	e0	NO	.0003 Amp	31.495 mm	15 ns
MT5C2564-20P	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	e0	NO	.003 Amp	31.495 mm	20 ns
MT5C2564-55	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	262144 bit		e0		.007 Amp		55 ns
MT5LC2564SG-20LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	3.63 V	2.72 mm	7.5 mm	Not Qualified	262144 bit	3 V	e0	NO	.00005 Amp	15.4 mm	20 ns
MT5C2564C-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	262144 bit		e0		.008 Amp		20 ns
MT5C6404DJ-35LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	65536 bit	4.5 V	e0	NO		15.9 mm	35 ns
MT5C2564SG-15LPITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64KX4	64K	2 V	-40 Cel		DUAL	1	R-PDSO-G24	5.5 V	2.72 mm	7.5 mm	Not Qualified	262144 bit	4.5 V		NO		15.4 mm	15 ns
MT5C2564C-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	262144 bit		e0		.0003 Amp		20 ns
MT5C1605DJ-10LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V	e0	YES		15.9 mm	10 ns
MT5C2561-30XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	262144 bit		e0		.005 Amp		30 ns
MT5LC2564SG-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	262144 bit		e0		.0003 Amp		25 ns
MT5C2564SG-45	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	262144 bit		e0		.007 Amp		45 ns
MT5C1606DJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16384 bit		e0		.003 Amp		12 ns
MT5C1606-15XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit		e0		.003 Amp		15 ns
MT5C1608-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	185 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit		e0		.005 Amp		12 ns
MT5C6405DJ-8LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	65536 bit	4.5 V	e0	YES		15.9 mm	8 ns
MT5C2561C-30L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	262144 bit		e0		.0003 Amp		30 ns
MT5C6405DJ-30LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	65536 bit		e0		.00025 Amp		30 ns
MT5C1605DJ-30XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16384 bit		e0		.003 Amp		30 ns
MT5C1607-35IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit		e0		.003 Amp		35 ns
MT5C1607C-15LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	16384 bit		e0		.00025 Amp		15 ns
MT5C1608C-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	CERAMIC	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-J24				Not Qualified	16384 bit		e0		.003 Amp		25 ns
MT5C2564DJ-35	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	262144 bit		e0		.007 Amp		35 ns
MT5C1601DJ-35LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V	e0	NO		15.9 mm	35 ns
MT5C1608DJ-25XT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16384 bit		e0		.005 Amp		25 ns
MT5LC2564-25PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	IN-LINE			2.54 mm	125 Cel		64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T24	3.6 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	3 V		NO		31.495 mm
MT5C2564DJ-10LTR	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.68 mm	7.67 mm	Not Qualified	262144 bit	4.5 V	e0	NO		15.9 mm	10 ns
MT5C1606-8AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit		e0		.003 Amp		8 ns
MT5LC2564-20LXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	3.3	3.3	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	3.6 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	3 V	e0	NO	.00005 Amp	31.495 mm	20 ns
MT5C2561C-30L883C	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	262144 bit		e0		.0008 Amp		30 ns
MT5C6404DJ-20LXTTR	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	65536 bit	4.5 V	e0	NO		15.9 mm	20 ns
MT5C6405C-30XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	65536 bit		e0		.005 Amp		30 ns
MT5C2561-12LPXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		1	IN-LINE			2.54 mm	125 Cel		256KX1	256K	2 V	-55 Cel		DUAL	1	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		NO		31.495 mm	12 ns
MT5C2561-25LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	e0	NO	.0003 Amp	31.495 mm	25 ns
MT5C2564DJ-45LXT	Micron Technology	STANDARD SRAM	MILITARY	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	4.5 V	e0	NO	.0003 Amp	15.9 mm	45 ns
MT5LC2561-15	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	262144 bit		e0		.003 Amp		15 ns
MT5C2561C20/883C	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	262144 bit		e0		.01 Amp		20 ns
MT5C6405-10XT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	65536 bit		e0		.003 Amp		10 ns
MT5C2564SG-25LPATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel		64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	2.72 mm	7.5 mm	Not Qualified	262144 bit	4.5 V	e0	NO		15.4 mm	25 ns
MT5LC2561-12PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		1	IN-LINE			2.54 mm	125 Cel		256KX1	256K		-40 Cel		DUAL	1	R-PDIP-T24	3.6 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	3 V		NO		31.495 mm
MT5C6405-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	e0	YES	.0003 Amp	31.495 mm	20 ns
MT5LC2564DJ-35LITTR	Micron Technology	STANDARD SRAM	INDUSTRIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.6 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	3 V	e0	NO		15.9 mm	35 ns
MT5LC2564DJ-20L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.6 V	3.68 mm	7.67 mm	Not Qualified	262144 bit	3 V	e0	NO	.0005 Amp	15.9 mm	20 ns
MT5C6405C-15/883C	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	65536 bit		e0		.005 Amp		15 ns
MT5C6405DJ-30L	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	65536 bit		e0		.00025 Amp		30 ns
MT5C1601DJ-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16384 bit		e0		.005 Amp		20 ns
MT5C6404DJ-12	Micron Technology	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	65536 bit		e0		.003 Amp		12 ns
MT5C2564-20PXT	Micron Technology	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX4	64K		-55 Cel		DUAL	1	R-PDIP-T24	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		NO		31.495 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.