256 SRAM 1,098

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
70T659S15BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1	30	260	.01 Amp		15 ns
70V7519S133BC	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	17 mm	15 ns
70T3509MS133BPI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1370 mA	1048576 words	COMMON	2.5	2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	17 mm	133 MHz	17 mm	Not Qualified	37748736 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	255	.08 Amp	17 mm	15 ns
70T3319S166BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.02 Amp	17 mm	12 ns
72T633S12BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		18	GRID ARRAY				70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B256	3	2.6 V				Not Qualified	9437184 bit	2.4 V		e1					12 ns
70V7519S133BC8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	17 mm	15 ns
70T3399S133BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260	.02 Amp	17 mm	15 ns
70T3519S133BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	9437184 bit	2.4 V		e1	30	260	.02 Amp		4.2 ns
70T3319S133BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.02 Amp	17 mm	15 ns
70T3599S200BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	200 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.015 Amp	17 mm	10 ns
70V7319S200BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256	3	3.45 V	1.4 mm		17 mm		4718592 bit	3.15 V		e1				17 mm	3.4 ns
70V3589S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V		e0	20	225	.03 Amp		4.2 ns
70T3339S200BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	200 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.015 Amp	17 mm	10 ns
70T3399S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.015 Amp	17 mm	15 ns
70T631S12BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225	.01 Amp	17 mm	12 ns
70V3379S5BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260	.015 Amp	17 mm	5 ns
70V7339S133BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	17 mm	15 ns
70T3339S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260	.015 Amp	17 mm	12 ns
70V3399S166BC8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	166 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225	.03 Amp	17 mm	12 ns
70T631S10BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225	.02 Amp	17 mm	10 ns
70V3319S133BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1			.04 Amp		4.2 ns
70T3399S166BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	2359296 bit			e0			.02 Amp		12 ns
70T3589S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.7 mm	133 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260	.015 Amp	17 mm	15 ns
70T659S15BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260	.01 Amp	17 mm	15 ns
70T3319S133BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260	.02 Amp	17 mm	15 ns
70T651S10BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225	.02 Amp	17 mm	10 ns
70T653MS12BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		512KX36	512K		-40 Cel		BOTTOM		S-PBGA-B256		2.6 V	1.5 mm		17 mm		18874368 bit	2.4 V						17 mm	12 ns
70T653MS12BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		0 Cel		BOTTOM		S-PBGA-B256		2.6 V	1.5 mm		17 mm		18874368 bit	2.4 V						17 mm	12 ns
70T633S10BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225	.02 Amp	17 mm	10 ns
70T653MS12BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	710 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	18874368 bit	2.4 V		e1	30	260	.02 Amp	17 mm	12 ns
70T3519S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.7 mm	133 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260	.015 Amp	17 mm	15 ns
70V7599S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel		BOTTOM	2	S-PBGA-B256		3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE				.03 Amp		4.2 ns
70V3389S6BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e0	20	225	.015 Amp		6 ns
70V7599S200BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	200 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	17 mm	10 ns
70T3599S166BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			166 MHz		Not Qualified	4718592 bit			e0			.02 Amp		12 ns
70T3589S133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	2359296 bit	2.4 V		e1	30	260	.015 Amp		4.2 ns
70V657S12BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	515 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V		e0	20	225	.015 Amp	17 mm	12 ns
IDT70T651S10BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	405 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260	.01 Amp	17 mm	10 ns
IDT70V659S12BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	465 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	4718592 bit	3.15 V		e1	30	260	.015 Amp	17 mm	12 ns
IDT70V3599S166BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	166 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	17 mm	12 ns
IDT70V7319S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1				17 mm	12 ns
70V658S15BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	490 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V		e1	30	260	.015 Amp	17 mm	15 ns
IDT70V657S10BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	500 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V		e1	30	260	.015 Amp	17 mm	10 ns
IDT70V3579S4BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e0	20	225		17 mm	4.2 ns
IDT70V631S12BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	515 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm		17 mm	Not Qualified	4718592 bit	3.15 V		e0	20	225	.015 Amp	17 mm	12 ns
IDT70T659S10BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260	.02 Amp	17 mm	10 ns
IDT70V3379S5BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX18	32K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V		e0	20	225	.03 Amp	17 mm	5 ns
IDT70V639S12BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	465 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V		e0	20	225	.015 Amp	17 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.