30 SRAM 44

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
DS2217-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE	R-PSMA-N30		Not Qualified	1048576 bit		.025 Amp	200 ns
DS2219-120	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO	HYBRID	NO LEAD			15 mA	1048576 words		5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		1MX9	1M			SINGLE	R-PSMA-N30		Not Qualified	9437184 bit		.015 Amp	120 ns
DS2219-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO	HYBRID	NO LEAD			15 mA	1048576 words		5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		1MX9	1M			SINGLE	R-PSMA-N30		Not Qualified	9437184 bit		.015 Amp	150 ns
DS1217A/16K-28	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30				PLASTIC/EPOXY	NO	CMOS				75 mA	2048 words				8		CARD30	SRAMs		70 Cel		2KX8	2K						Not Qualified	16384 bit		.01 Amp	250 ns
DS2217-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE	R-PSMA-N30		Not Qualified	1048576 bit		.025 Amp	120 ns
DS2217-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE	R-PSMA-N30		Not Qualified	1048576 bit		.025 Amp	150 ns
THM91002L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				540 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	9437184 bit	e0	.009 Amp	100 ns
THM8514S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			134 mA	524288 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K			SINGLE	R-PSMA-N30		Not Qualified	4194304 bit		.004 Amp	100 ns
THM91022L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				450 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	9437184 bit	e0	.009 Amp	120 ns
THM91002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			450 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	9437184 bit		.009 Amp	120 ns
THM81022L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				400 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	8388608 bit	e0	.008 Amp	120 ns
THM81002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			400 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	8388608 bit		.008 Amp	120 ns
THM81002L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				400 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	8388608 bit	e0	.008 Amp	120 ns
THM8514L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				134 mA	524288 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	4194304 bit	e0	.004 Amp	100 ns
THM81002S-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			560 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	8388608 bit		.008 Amp	85 ns
THM91002L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				450 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	9437184 bit	e0	.009 Amp	120 ns
THM91002S-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	9437184 bit		.009 Amp	85 ns
THM81022L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	8388608 bit	e0	.008 Amp	100 ns
THM91022L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				630 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	9437184 bit	e0	.009 Amp	85 ns
THM91002L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				630 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	9437184 bit	e0	.009 Amp	85 ns
THM81002L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	8388608 bit	e0	.008 Amp	100 ns
THM81002L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				560 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	8388608 bit	e0	.008 Amp	85 ns
THM8514S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			114 mA	524288 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K			SINGLE	R-PSMA-N30		Not Qualified	4194304 bit		.004 Amp	120 ns
THM8514L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				114 mA	524288 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	4194304 bit	e0	.004 Amp	120 ns
THM91022L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				540 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	9437184 bit	e0	.009 Amp	100 ns
THM81022L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				560 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	8388608 bit	e0	.008 Amp	85 ns
THM81002S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			480 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	8388608 bit		.008 Amp	100 ns
THM91002S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			540 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	9437184 bit		.009 Amp	100 ns
MC-421000C8A-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				560 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	8388608 bit	e0	.008 Amp	80 ns
MC-421000C8A-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				480 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	8388608 bit	e0	.008 Amp	100 ns
8MP824S70S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30				PLASTIC/EPOXY	NO	CMOS		PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	TIN LEAD	SINGLE			Not Qualified	1048576 bit	e0	.06 Amp	70 ns
IDT8MP824S60S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30				PLASTIC/EPOXY	NO	CMOS		PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	TIN LEAD	SINGLE			Not Qualified	1048576 bit	e0	.06 Amp	60 ns
MC-421000C9A-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				630 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	9437184 bit	e0	.009 Amp	80 ns
IDT8MP824S70S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30				PLASTIC/EPOXY	NO	CMOS		PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	TIN LEAD	SINGLE			Not Qualified	1048576 bit	e0	.06 Amp	70 ns
MC-421000C8B-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			480 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30		Not Qualified	8388608 bit		.008 Amp	100 ns
MC-421000C8A-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				400 mA	1048576 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	8388608 bit	e0	.008 Amp	120 ns
MC-421000C9B-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30		Not Qualified	9437184 bit		.009 Amp	80 ns
8MP824S60S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30				PLASTIC/EPOXY	NO	CMOS		PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	TIN LEAD	SINGLE			Not Qualified	1048576 bit	e0	.06 Amp	60 ns
MC-421000C9B-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			540 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30		Not Qualified	9437184 bit		.009 Amp	100 ns
MC-421000C8B-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			400 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30		Not Qualified	8388608 bit		.008 Amp	120 ns
MC-421000C9B-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			450 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30		Not Qualified	9437184 bit		.009 Amp	120 ns
MC-421000C9A-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				540 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	9437184 bit	e0	.009 Amp	100 ns
MC-421000C9A-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS				450 mA	1048576 words	COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	9437184 bit	e0	.009 Amp	120 ns
MC-421000C8B-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD			560 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30		Not Qualified	8388608 bit		.008 Amp	80 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.