32 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55NEM208AFGV55	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words		COMMON	5	3/5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	2.7 V	IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=55NS					.000003 Amp	20.6 mm	85 ns
TC518129CFWL-10V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.56		Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	20.6 mm	100 ns
TC554001AFT-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.000025 Amp	20.95 mm	70 ns
TC518128BFWL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	80 ns
TC518129CFTL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	100 ns
TC551001BSTI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V					YES		11.8 mm	100 ns
TC551001CFT-55L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V					YES	.00001 Amp	18.4 mm	55 ns
TC554001FL-85V	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	3.3/5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V	VDD 3.3V TO 5.5V ; ACCESS TIME=150NS	e0			YES	.00003 Amp	20.6 mm	85 ns
TC554001FTL-70V	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	VDD 3.3V TO 5.5V ; ACCESS TIME=150NS				YES	.00003 Amp	20.95 mm	70 ns
TC551001CF-55	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.6 mm	55 ns
TC55V2001F-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE				1.27 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	2.8 mm	10.7 mm	Not Qualified	2097152 bit	2.7 V		e0					20.6 mm	100 ns
TC55329P-25	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	9	IN-LINE	DIP32,.3		SRAMs	2.54 mm	70 Cel		3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm	7.62 mm	Not Qualified	294912 bit	4.5 V		e0			YES	.001 Amp	40 mm	25 ns
TC518512AFT-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.0001 Amp	20.95 mm	100 ns
TC551001FI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	100 ns
TC551001ATRL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	85 ns
TC551001CSTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					11.8 mm	85 ns
TC554001FTI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V					YES	.00014 Amp	18.4 mm	85 ns
TC518129AP-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE				2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	100 ns
TC55V1403J-12	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1048576 words		CONFIGURABLE	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	1	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V	CAN ALSO BE CONFIGURED AS 1M X 4	e0				.01 Amp	20.96 mm	12 ns
TC554001ATRI-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	YES	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.0001 Amp	20.95 mm	85 ns
TC518128AFWL-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		20.6 mm	120 ns
TC518128CFL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5		Other Memory ICs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	80 ns
TC55V1001ASRI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0					11.8 mm	100 ns
TC518512PL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE				2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	80 ns
TC55V1001AFTI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0			YES		18.4 mm	100 ns
TC551001CSR-85	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	11.8 mm	85 ns
TC558128AJ-20(EL)	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-J32	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.96 mm	20 ns
TC518129CPL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	3	3/5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	3.3 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	42 mm	80 ns
TC551001CTRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	70 ns
TC55V1001STI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V					YES	.00002 Amp	11.8 mm	100 ns
TC518129CPL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	70 ns
TC558128AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL	1	R-PDSO-J32	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V					YES	.001 Amp	20.96 mm	20 ns
TC518129CPL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	42 mm	100 ns
TC55V1001SR-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V					YES		11.8 mm	100 ns
TC551001AFTL-85L(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000015 Amp	18.4 mm	85 ns
TC551001ATRL-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	100 ns
TC518129AF-10LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	100 ns
TC551001BSTL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000015 Amp	11.8 mm	85 ns
TC551001CFTI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	7.9 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
TC518128CPL-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3	3/5	8	IN-LINE	DIP32,.6		Other Memory ICs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	3.3 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	42 mm	70 ns
TC55V4000ST-85	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			11.8 mm	100 ns
TC518512FL-80(DR)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel			512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	80 ns
TC551001BFTI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		18.4 mm	100 ns
TC55B4257P-20	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BICMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words			5		4	IN-LINE				2.54 mm	70 Cel			256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		40 mm	20 ns
TC518129CFTL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	80 ns
TC55V2001F-10	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words			3		8	SMALL OUTLINE				1.27 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	2.8 mm	10.7 mm	Not Qualified	2097152 bit	2.7 V		e0					20.6 mm	100 ns
TC55V1001FT-10L	Toshiba	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V					YES		18.4 mm	100 ns
TC518129ATRL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		18.4 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.