Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
42 mm |
120 ns |
||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.45 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
40 mm |
80 ns |
||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
.00014 Amp |
20.6 mm |
85 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.00005 Amp |
100 ns |
|||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
18.4 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
.0001 Amp |
18.4 mm |
85 ns |
||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
524288 words |
YES |
COMMON |
3 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2.7 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
3.3 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
USER SELECTABLE 5V VCC |
YES |
.00004 Amp |
20.95 mm |
80 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
YES |
11.8 mm |
85 ns |
||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
11.8 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
YES |
COMMON |
3 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2.7 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
3.3 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.00004 Amp |
20.6 mm |
100 ns |
||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V |
e0 |
YES |
20.6 mm |
80 ns |
|||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO REFRESH |
18.4 mm |
120 ns |
|||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
Not Qualified |
4194304 bit |
4.5 V |
CE/AUTO REFRESH |
20.45 mm |
100 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
18.4 mm |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
20.95 mm |
120 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
80 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.3 V |
3 mm |
Not Qualified |
4194304 bit |
2.7 V |
CE/AUTO/SELF REFRESH |
20.45 mm |
120 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
Not Qualified |
4194304 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
20.45 mm |
85 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
100 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3.05 mm |
Not Qualified |
1048576 bit |
4.5 V |
20.45 mm |
120 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
20.95 mm |
120 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
200k Rad(Si) |
CERAMIC |
YES |
CMOS |
MIL-STD-883 Class B (Modified) |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
34.2 mA |
16384 words |
SEPARATE |
5 |
5 |
1 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
16KX1 |
16K |
3 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-XQCC-N32 |
Not Qualified |
16384 bit |
e0 |
.005 Amp |
175 ns |
||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
Not Qualified |
4194304 bit |
4.5 V |
CE/AUTO REFRESH |
20.45 mm |
80 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.3 V |
3 mm |
11.3 mm |
Not Qualified |
4194304 bit |
2.7 V |
20.45 mm |
135 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
100 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
100 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
2 V |
0 Cel |
DUAL |
R-PDSO-J32 |
2 |
3.6 V |
3.55 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
.0004 Amp |
20.95 mm |
12 ns |
||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
100 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
18.4 mm |
120 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
20.71 mm |
10 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
41.9 mm |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.71 mm |
25 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
200 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.00012 Amp |
19 ns |
||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
Not Qualified |
4194304 bit |
4.5 V |
CE/AUTO REFRESH |
20.45 mm |
120 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
20.95 mm |
150 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
41.9 mm |
120 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.015 Amp |
25 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
20.71 mm |
12 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
18.4 mm |
120 ns |
|||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
20.95 mm |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
18.4 mm |
100 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.03 Amp |
25 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.02 Amp |
30 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
QUAD |
R-XQCC-N32 |
Not Qualified |
262144 bit |
.0005 Amp |
35 ns |
|||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
41.9 mm |
80 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
20.95 mm |
150 ns |
||||||||||||||||||||||||||
Renesas Electronics |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
100 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.