34 SRAM 405

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DS1650YLPM-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel								Not Qualified	4194304 bit				.005 Amp		70 ns
DS1645YL-85	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1630YL-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel								Not Qualified	262144 bit				.005 Amp		70 ns
DS1650YLPM-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel								Not Qualified	4194304 bit				.005 Amp		70 ns
DS1650YL-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel								Not Qualified	4194304 bit				.005 Amp		70 ns
DS1650ABLPM-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel								Not Qualified	4194304 bit				.005 Amp		100 ns
DS1650YL-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel								Not Qualified	4194304 bit				.005 Amp		70 ns
DS1645YL-120	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	120 ns
DS1645ABLPM-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel								Not Qualified	1048576 bit				.005 Amp		100 ns
DS1645ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	70 ns
DS1645YLPM-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel								Not Qualified	1048576 bit				.005 Amp		100 ns
DS1650ABLPM-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel								Not Qualified	4194304 bit				.005 Amp		70 ns
DS1645YL-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel								Not Qualified	1048576 bit				.005 Amp		70 ns
DS1645ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	100 ns
DS1630YLPM-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel								Not Qualified	262144 bit				.005 Amp		70 ns
DS1645ABL-120-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	120 ns
DS1645ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	70 ns
DS1645YLPM-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel								Not Qualified	1048576 bit				.005 Amp		70 ns
DS1645ABLPM-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel								Not Qualified	1048576 bit				.005 Amp		70 ns
DS1630ABLPM-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel								Not Qualified	262144 bit				.005 Amp		70 ns
DS1630YL-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel								Not Qualified	262144 bit				.005 Amp		70 ns
DS1645YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	100 ns
DS1645YL-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel								Not Qualified	1048576 bit				.005 Amp		70 ns
DS1630YLPM-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel								Not Qualified	262144 bit				.005 Amp		70 ns
DS1645YLPM-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel								Not Qualified	1048576 bit				.005 Amp		70 ns
DS1645ABL-85-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1650ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION		.005 Amp	24.5745 mm	100 ns
DS1345ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1730YLPM-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	32768 words		3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel								Not Qualified	262144 bit				.004 Amp		200 ns
DS1350YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1330YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel		DUAL	R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION PERIOD		.00015 Amp	24.5745 mm	100 ns
DS1350ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	512KX8	512K	0 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	70 ns
DS1745YL-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words		3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel								Not Qualified	1048576 bit				.004 Amp		150 ns
DS1330ABL-100IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION = 10 YRS	e0	.00015 Amp	24.4475 mm	100 ns
DS1750YL-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words		3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel								Not Qualified	4194304 bit				.004 Amp		150 ns
DS1750YL-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words		3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel								Not Qualified	4194304 bit				.004 Amp		200 ns
DS1350ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	512KX8	512K	0 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1350WP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e3	.00015 Amp		100 ns
DS1350ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1345Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words	5		8	MICROELECTRONIC ASSEMBLY				85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-N34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0			70 ns
DS1750YLPM-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words		3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel								Not Qualified	4194304 bit				.004 Amp		150 ns
DS1345WP-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	1048576 bit	3 V		e0	.00015 Amp		150 ns
DS1345YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1330ABP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e3	.00015 Amp		100 ns
DS1345YP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-U34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e3	.00015 Amp		100 ns
DS1330WP-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	262144 bit	3 V		e0	.00015 Amp		150 ns
DS1330W-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-N34					Not Qualified	262144 bit		10 YEAR DATA RETENTION PERIOD	e0			150 ns
DS1745YLPM-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words		3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel								Not Qualified	1048576 bit				.004 Amp		150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.