34 SRAM 405

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DS1230WP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-XDMA-P34	1	3.6 V		23.495 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp	25.019 mm	100 ns
DS1250WP-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0	.00015 Amp		100 ns
DS1230YL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		100 ns
DS1230YP-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		120 ns
DS1230ABP-70IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDMA-C34		5.25 V	6.85 mm	23.495 mm	Not Qualified	262144 bit	4.75 V		e3	.0006 Amp	25.019 mm	70 ns
DS1250BL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V		e0	.005 Amp		100 ns
DS1230ABP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34	1	5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		100 ns
DS1230YP-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		200 ns
DS1250WP-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e3	.00025 Amp		100 ns
DS1250BL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V		e0	.005 Amp		70 ns
DS1230YP-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		120 ns
DS1230YL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel		DUAL	R-XDMA-U34	1	5.5 V			Not Qualified	262144 bit	4.5 V			.005 Amp		70 ns
DS1250ABP-70+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e3	.0006 Amp		70 ns
DS1250ABP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp		70 ns
DS1250YP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp		70 ns
DS1230ABP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		70 ns
DS1250WP-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	DIP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e3	.00025 Amp		150 ns
DS1250ABP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp		70 ns
DS1245YL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	1048576 bit	4.5 V		e0	.005 Amp		100 ns
DS1250YP-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3	.0006 Amp		100 ns
DS1230YP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		100 ns
DS1250ABP-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e3	.0006 Amp		100 ns
DS1245ABP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34	1	5.25 V			Not Qualified	1048576 bit	4.75 V		e0	.005 Amp		100 ns
DS1250YP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp		100 ns
DS1250YL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V		e0	.005 Amp		70 ns
DS1250YL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V		e0	.005 Amp		70 ns
DS1230ABP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		100 ns
DS1230YP-200-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		200 ns
DS1245WP-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp		100 ns
DS1230BL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		70 ns
DS1245YP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34	1	5.5 V			Not Qualified	1048576 bit	4.5 V		e0	.005 Amp		70 ns
DS1230WP-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-XDMA-P34	1	3.6 V		23.495 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp	25.019 mm	150 ns
DS1250WP-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0	.00015 Amp		150 ns
DS1230YL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		100 ns
DS1230WP-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	256KX8	256K	-40 Cel	TIN LEAD	DUAL	R-XDMA-P34		3.6 V		23.495 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp	25.019 mm	100 ns
DS1230YP-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		85 ns
DS1230ABP-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-N34		5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0			70 ns
DS1245BL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	1048576 bit	4.75 V		e0	.005 Amp		70 ns
DS1230YL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel		DUAL	R-XDMA-U34	1	5.5 V			Not Qualified	262144 bit	4.5 V			.005 Amp		70 ns
DS1230YP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34	1	5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		100 ns
DS1230ABP-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		150 ns
DS1245WP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34	1	3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp		100 ns
DS1250WP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0	.00015 Amp		100 ns
DS1230YP-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-N34		5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0			70 ns
DS1230ABP-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		120 ns
DS1245YL-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel		DUAL	R-XDMA-X34	1	5.5 V			Not Qualified	1048576 bit	4.5 V			.005 Amp		70 ns
DS1230ABP-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		200 ns
DS1250WP-150-C01	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0			150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.