4 SRAM 6

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
DS2224Y-XXX	Analog Devices	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	256 words				1	SMALL OUTLINE			2.3 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	5.5 V	1.8 mm	3.5 mm	Not Qualified	256 bit	1.2 V		e0			6.5 mm
DS2224Z-XXX	Analog Devices	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	256 words				1	SMALL OUTLINE			2.3 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	5.5 V	1.8 mm	3.5 mm	Not Qualified	256 bit	1.2 V		e0			6.5 mm
DS2223Z	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256 words	COMMON	5	2/5.5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel	OPEN-DRAIN	256X1	256	-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-G4	1	5.5 V	1.8 mm	3.5 mm	Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0			6.5 mm	1000 ns
DS2224Y	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	224 words		5		1	SMALL OUTLINE			2.3 mm	85 Cel		224X1	224	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4		5.5 V	1.8 mm	3.5 mm	Not Qualified	224 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0			6.5 mm	1000 ns
DS2223Y	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256 words		5		1	SMALL OUTLINE			2.3 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4		5.5 V	1.8 mm	3.5 mm	Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0			6.5 mm	1000 ns
DS2224Z	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	224 words	COMMON	5	2/5.5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel	OPEN-DRAIN	224X1	224	-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-G4	1	5.5 V	1.8 mm	3.5 mm	Not Qualified	224 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0	20	240	6.5 mm	1000 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.