44 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55NEM216ASTV55	Toshiba	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	3/5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V					.000003 Amp	18.41 mm	70 ns
TC551664J-25	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE				1.27 mm	70 Cel		64KX16	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e0					28.58 mm	25 ns
TC55V8512FT-15(EL)	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	4194304 bit		e0				.004 Amp		15 ns
TC55VZM216AJGN10	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V					.004 Amp	28.58 mm	10 ns
TC55VZM208ATGI08	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V						18.41 mm	8 ns
TC55V1664BFT-8	Toshiba	CACHE SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		3.465 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3.135 V	e0				.002 Amp	18.41 mm	8 ns
TC55V1664FT-13	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	16	SRAMs	.8 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		3.465 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3.135 V	e0			YES	.002 Amp	18.41 mm	13 ns
TC55V1864FT-12	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1179648 bit	3 V	e0				.001 Amp	18.41 mm	12 ns
TC55V2161FT-85L	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		128KX16	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V	e0					18.41 mm	85 ns
TC55VZM216ATGI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V						18.41 mm	10 ns
TC55V1664BFTI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V					.002 Amp	18.41 mm	12 ns
TC55V1664BJ-10	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	3 V	e0				.002 Amp	28.58 mm	10 ns
TC55V16256FT-15	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	18.41 mm	15 ns
TC551864AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		18	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		5.5 V	3.7 mm	10.16 mm	Not Qualified	1179648 bit	4.5 V	e0			YES		28.58 mm	20 ns
TC55VZM216AFTI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e0				.01 Amp	18.41 mm	10 ns
TC55V1664J-30	Toshiba	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit		e0				.002 Amp		30 ns
TC55V1864FT-15	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	18	SRAMs	.8 mm	70 Cel	3-STATE	128KX9	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1179648 bit	3 V	e0			YES	.002 Amp	18.41 mm	15 ns
TC551664BJ-12	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e0				.001 Amp	28.58 mm	12 ns
TC551664BJ-10	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	310 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.75 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.25 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	e0				.001 Amp	28.58 mm	10 ns
TC551664BFTI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.75 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e0				.001 Amp	18.41 mm	12 ns
TC55V16256J-15	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e0				.004 Amp	28.58 mm	15 ns
TC55VZM216ATGI12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V						18.41 mm	12 ns
TC55VZM216AJJI08	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e0				.01 Amp	28.58 mm	8 ns
TC55VZM208ATGN12	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V					.004 Amp	18.41 mm	12 ns
TC55V1664BFT-15	Toshiba	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	1048576 bit		e0				.002 Amp		15 ns
TC551664AJ-15EL	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	64KX16	64K		0 Cel		DUAL	1	R-PDSO-J44		5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	YES		28.58 mm	15 ns
TC551664AJ-15	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ44,.44	16	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel		DUAL	1	R-PDSO-J44		5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V				YES	.001 Amp	28.58 mm	15 ns
TC55V8512FTI-15	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.01 Amp	18.41 mm	15 ns
TC55VZM216AFTN10	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	e0				.004 Amp	18.41 mm	10 ns
TC55V1664BJ-15	Toshiba	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit		e0				.002 Amp		15 ns
TC55V1664BFTI-10	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	240 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V					.002 Amp	18.41 mm	10 ns
TC55V1664J-10	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	3 V	e0				.001 Amp	28.58 mm	10 ns
TC55V2161FTI-10	Toshiba	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		128KX16	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V	e0					18.41 mm	100 ns
TC55V2161FTI-10L	Toshiba	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		128KX16	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V	e0					18.41 mm	100 ns
TC55V1664BFT-10	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V					.002 Amp	18.41 mm	10 ns
TC55V16256FT-12	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.004 Amp	18.41 mm	12 ns
TC55VZM216AJGI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE				1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V						28.58 mm	10 ns
71016S20YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	40	260		.01 Amp	28.575 mm	20 ns
71016NS12PHI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V			Not Qualified	1048576 bit	4.5 V	e0				.01 Amp		12 ns
71016NS20PH	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V			Not Qualified	1048576 bit	4.5 V	e0				.01 Amp		20 ns
71016NS20YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J44		5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3				.01 Amp	28.575 mm	20 ns
71016S20YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	40	260		.01 Amp	28.575 mm	20 ns
71016S15YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	40	260		.01 Amp	28.575 mm	15 ns
71016S25PH	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3				Not Qualified	1048576 bit		e0	30	240		.01 Amp		25 ns
71016S20PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	30	260		.01 Amp	18.41 mm	20 ns
71016S20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	40	260		.01 Amp	28.575 mm	20 ns
71016S25Y	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit		e0	30	225		.01 Amp		25 ns
71016S20PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	e3	30	260		.01 Amp	18.41 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.