44 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6R1016V1D-TC12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	1048576 bit			e0				.001 Amp		12 ns
K6R1016V1C-JL10T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel		DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit					240		.0003 Amp		10 ns
K6F8016V3A-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V							18.4 mm	55 ns
KM616FV1000R-7	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	YES	3-STATE	64KX16	64K	1.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	1048576 bit			e0				.000005 Amp		70 ns
KM616FV8000RI-5	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V							18.41 mm	55 ns
K6X4016T3F-UB550	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2.7 V	0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.0003 Amp	18.41 mm	55 ns
KM6161002CIT-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							18.41 mm	12 ns
K6R1016V1C-TI12T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	1048576 bit			e0				.005 Amp		12 ns
K6R1016V1D-UC10	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	TIN SILVER COPPER	DUAL		R-PDSO-G44	3				Not Qualified	1048576 bit			e1		260		.005 Amp		10 ns
K6R1016C1C-JP20T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.0003 Amp		20 ns
KM616V1002ALJ-15	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.0005 Amp		15 ns
K6F8016U3A-RF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V							18.41 mm	55 ns
KM616V4002CTI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	18.41 mm	12 ns
K6R1016C1A-TI120	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel		DUAL		R-PDSO-G44	1	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						.008 Amp	18.41 mm	12 ns
K6R1016V1C-JP100	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel		DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit					240		.0003 Amp		10 ns
KM616V1002CLTI-1	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V							18.41 mm	10 ns
KM616FV1000TI-7	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.000005 Amp	18.41 mm	70 ns
K6X8008C2B-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel		3-STATE	1MX8	1M	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V		e0					18.41 mm	70 ns
K6R1016V1C-TI12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	18.41 mm	12 ns
K6L1016C3B-RF700	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							18.41 mm	70 ns
K6R1016C1C-TP10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	1048576 bit			e0				.0003 Amp		10 ns
K6F2016V3M-TC70	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			128KX16	128K		0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	3 V							18.41 mm	70 ns
KM6161002BIT-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							18.41 mm	10 ns
K6R1016V1D-TI08	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	18.41 mm	8 ns
KM616V1000BLTE-8	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			YES	.00005 Amp	18.41 mm	85 ns
KM6161002AT-17	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	16	SRAMs	.8 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.01 Amp	18.41 mm	17 ns
KM6164000ALT-7	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel		DUAL	1	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V					YES		18.41 mm	70 ns
KM79C86-14	Samsung	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel			32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44		5.5 V	4.57 mm	16.5862 mm	Not Qualified	294912 bit	4.5 V	REGISTERED INPUT; BURST COUNTER				YES		16.5862 mm	14 ns
KM616U4000CLTI-8L0	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V							18.41 mm	85 ns
K6R1016V1D-TC080	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	8 ns
KM616V4002BLT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES	.0007 Amp	18.41 mm	12 ns
K6T8008C2M-TB70	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	1MX8	1M	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V		e0					18.41 mm	70 ns
K6X8008T2B-UF700	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	1MX8	1M	1.5 V	-40 Cel	TIN BISMUTH	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		e6				.000015 Amp	18.41 mm	70 ns
K6R1016V1C-TI10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-G44	3				Not Qualified	1048576 bit					240		.005 Amp		10 ns
K6R1016V1D-JI10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit			e0		240		.001 Amp		10 ns
KM6164002CTI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	18.41 mm	12 ns
K6R1016V1D-KI100	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE				1.27 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-J44	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V							25.58 mm	10 ns
K6R1016C1B-TI8T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	1048576 bit			e0				.01 Amp		8 ns
KM6161002BJ-12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.01 Amp	28.58 mm	12 ns
KM616FS1010TI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	2.5	2.3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.3 V		e0					18.41 mm	120 ns
KM616V1002BJI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	28.58 mm	12 ns
K6F8016V3M-TF700	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V							18.41 mm	70 ns
K6R1016C1C-JL15	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0003 Amp	28.58 mm	15 ns
K6R1016V1C-TL15	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.0003 Amp	18.41 mm	15 ns
K6R1016V1C-JL15	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.0003 Amp	28.58 mm	15 ns
K6L1016U3B-RB100	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V							18.41 mm	100 ns
K6R1016V1D-JC08T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.001 Amp		8 ns
K6F8008U2M-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			1MX8	1M		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V							18.41 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.