44 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1021BV33-10ZC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		64KX16	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e0					18.41 mm	10 ns
CY7C1041BNV33L-15ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260		.00033 Amp	18.415 mm	15 ns
CY7C1041CV33-20ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260		.015 Amp	18.415 mm	20 ns
CY7C1041CV33-20ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		0 Cel	TIN	DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3					18.415 mm	20 ns
CY7C1041D-10VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e4	40	260		.01 Amp	28.575 mm	10 ns
CY7C1041G-10VXIT	Infineon Technologies	STANDARD SRAM		44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE	SOJ44,.44		1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	4.5 V					YES	.008 Amp	28.575 mm	10 ns
CY7C1059DV33-12ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e3	40	260		.02 Amp	18.415 mm	12 ns
GVT73256A16TS-15	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	18.56 mm	15 ns
K6R4016C1D-TI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0	30	240		.005 Amp	18.41 mm	10 ns
K6X4016T3F-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V						.0003 Amp	18.41 mm	55 ns
K6X8008C2B-TF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	4.5 V		e0					18.41 mm	55 ns
K6X8016T3B-TF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3					Not Qualified	8388608 bit			e0		240		.000015 Amp		55 ns
K6X8016T3B-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44						Not Qualified	8388608 bit			e0				.000015 Amp		70 ns
KM6161000BLTI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00002 Amp	18.41 mm	70 ns
MCM62940AFN14	Motorola	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	165 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	294912 bit	4.5 V	OUTPUT BUFFER SUPPLY VOLTAGE 5V +/- 10% OR 3.3V +/- 10%; SELF-TIMED WRITE; BURST COUNTER	e0			YES	.03 Amp	16.5862 mm	14 ns
SN74ACT2157FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX16	2K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	32768 bit	4.75 V					NO		16.5862 mm	20 ns
SN74ACT2155-28FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND				2048 words		5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J44						Not Qualified	16384 bit									28 ns
SN74ACT2158-22FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	8192 words		5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	73728 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	YES	.16 Amp	16.5862 mm	22 ns
SN74ACT2158-22FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX9	8K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	73728 bit	4.75 V					YES		16.5862 mm	22 ns
SN74ACT2155FN	Texas Instruments	CACHE TAG SRAM		44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words				8	CHIP CARRIER			1.27 mm			2KX8	2K				QUAD		S-PQCC-J44			4.57 mm		16.5862 mm	Not Qualified	16384 bit								16.5862 mm
SN74ACT2155-22FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	2048 words		5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.125 Amp	16.5862 mm	22 ns
SN74ACT2159-22FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX9	8K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	73728 bit	4.75 V					YES		16.5862 mm	22 ns
SN74ACT2158-25FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND				8192 words		5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel		8KX9	8K		0 Cel		QUAD		S-PQCC-J44						Not Qualified	73728 bit									25 ns
SN74ACT2157-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			190 mA	2048 words		5	5	16	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-J44						Not Qualified	32768 bit							.15 Amp		20 ns
SN74ACT2157FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX16	2K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	32768 bit	4.75 V					NO		16.5862 mm	20 ns
SN74ACT2156-20FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	16384 words		5	5	4	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	65536 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	YES	.15 Amp	16.5862 mm	20 ns
SN74ACT2159FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		8KX9	8K		0 Cel		QUAD		S-PQCC-J44			4.57 mm		16.5862 mm	Not Qualified	73728 bit								16.5862 mm
SN74ACT2156-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	16384 words		5	5	4	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	65536 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	YES	.15 Amp	16.5862 mm	20 ns
SN74ACT2158FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		8KX9	8K		0 Cel		QUAD		S-PQCC-J44			4.57 mm		16.5862 mm	Not Qualified	73728 bit								16.5862 mm
SN74ACT2156FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words				4	CHIP CARRIER			1.27 mm	70 Cel		16KX4	16K		0 Cel		QUAD		S-PQCC-J44			4.57 mm		16.5862 mm	Not Qualified	65536 bit								16.5862 mm
SN74ACT2159-22FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	8192 words		5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX9	8K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.57 mm		16.5862 mm	Not Qualified	73728 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	YES	.16 Amp	16.5862 mm	22 ns
SN74ACT2155-22FNR	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	16384 bit	4.5 V					YES		16.5862 mm	22 ns
N02L163WC2AT2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V			40	260		.00001 Amp	18.41 mm	70 ns
N04L163WC2AT2-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V			40	260			18.41 mm	85 ns
N04L163WC2AT2-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V							18.41 mm	70 ns
N02L1618C1AT2-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	3 mA	131072 words	COMMON	1.8	1.8/2	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel		DUAL		R-PDSO-G44		2.2 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	1.65 V			40	260		.00001 Amp	18.41 mm	85 ns
N01L163WC2AT2-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel	MATTE TIN/NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V		e3/e4	40	260		.00001 Amp	18.41 mm	55 ns
N01L63W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N01L6183AT27I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	1.8	1.8	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.2 V	-40 Cel		DUAL		R-PDSO-G44		2.2 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	1.65 V						.000005 Amp	18.41 mm	85 ns
N02L163WN1AT2-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel	MATTE TIN/NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.7 V		e3/e4	40	260		.00001 Amp	18.41 mm	55 ns
N01L6183AT7IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	1.8	1.8	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.2 V	-40 Cel		DUAL		R-PDSO-G44		2.2 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	1.65 V						.000005 Amp	18.41 mm	85 ns
N01L163WC2AT-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V		e0				.00001 Amp	18.41 mm	70 ns
N04L163WC2AT-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N01L63W2AT5IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W2AT7IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N02L63W2AT5I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N02L63W3AT5IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04Q1618C2BT2-85C	Onsemi	STANDARD SRAM	COMMERCIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44		1.95 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	1.65 V		e3/e4	40	260			18.41 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.