676 SRAM 20

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Maximum Standby Current	Maximum Access Time
CY7C0430V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	1310720 bit	.01 Amp	4 ns
CY7C0450V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	1310720 bit	.00001 Amp	4 ns
CY7C0452V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX40	128K	1.71 V	-40 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	5242880 bit	.01 Amp	3.5 ns
CY7C0450V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	1310720 bit	.00001 Amp	3.5 ns
CY7C0431V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	100 MHz	Not Qualified	2621440 bit	.01 Amp	4.5 ns
CY7C0451V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	2621440 bit	.01 Amp	3.5 ns
CY7C0430V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	1310720 bit	.01 Amp	3.5 ns
CY7C0451V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	64KX40	64K	1.71 V	-40 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	2621440 bit	.01 Amp	3.5 ns
CY7C0430V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	100 MHz	Not Qualified	1310720 bit	.01 Amp	4.5 ns
CY7C0450V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	100 MHz	Not Qualified	1310720 bit	.00001 Amp	4.5 ns
CY7C0451V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	2621440 bit	.01 Amp	4 ns
CY7C0451V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	100 MHz	Not Qualified	2621440 bit	.01 Amp	4.5 ns
CY7C0452V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	5242880 bit	.01 Amp	3.5 ns
CY7C0452V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	100 MHz	Not Qualified	5242880 bit	.01 Amp	4.5 ns
CY7C0452V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	5242880 bit	.01 Amp	4 ns
CY7C0452V18-133BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX40	128K	1.71 V	-40 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	5242880 bit	.01 Amp	4 ns
CY7C0431V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	2621440 bit	.01 Amp	3.5 ns
CY7C0431V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX20	128K	1.71 V	-40 Cel	BOTTOM	4	S-PBGA-B676	167 MHz	Not Qualified	2621440 bit	.01 Amp	3.5 ns
CY7C0451V18-133BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	64KX40	64K	1.71 V	-40 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	2621440 bit	.01 Amp	4 ns
CY7C0431V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel	BOTTOM	4	S-PBGA-B676	133 MHz	Not Qualified	2621440 bit	.01 Amp	4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.