68 SRAM 1,929

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7005L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	5.5 V		24.2062 mm		65536 bit	4.5 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
7005L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	5.5 V		24.2062 mm		65536 bit	4.5 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
IDT7005L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68		5.5 V	4.57 mm	24.2062 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3	30	260			24.2062 mm	20 ns
7007L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11		SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	3	5.5 V			Not Qualified	262144 bit	4.5 V		e3		260		.01 Amp		20 ns
IDT7007L20JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	PLASTIC/EPOXY	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11		SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	PERPENDICULAR	2	S-PPGA-P68					Not Qualified	262144 bit			e3				.01 Amp		20 ns
7007L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
IDT7007L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	20 ns
IDT7133LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	CHIP CARRIER				1.27 mm	85 Cel		2KX16	2K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3					24.2062 mm	25 ns
7133LA25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	25 ns
7133LA25JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.57 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V		e3	30	260		.004 Amp	24.2062 mm	25 ns
5962-8861012ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11		SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	29.464 mm	55 ns
7007L15JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.005 Amp	24.2062 mm	15 ns
7133SA35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER					70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								35 ns
IDT7007L15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	PLASTIC/EPOXY	NO		CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	PERPENDICULAR	2	S-PPGA-P68	1				Not Qualified	262144 bit			e3	30	260		.005 Amp		15 ns
7133LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm	24.2062 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	30	260		.0015 Amp	24.2062 mm	20 ns
CY7C133-25JC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68		5.5 V	5.08 mm	24.2316 mm	Not Qualified	32768 bit	4.5 V	FLOW-THROUGH ARCHITECTURE	e0			YES	.015 Amp	24.2316 mm	25 ns
MK45180Q20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		10	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel		4KX10	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	MATCH OUTPUT; ON CHIP PARITY CHECKER/GENERATOR; FLASH CLEAR; LOCAL AND SNOOP PORT COMPARATOR	e0			YES	.13 Amp	24.23 mm	20 ns
MK4202Q-22	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.5 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.5 V		e0			YES	.05 Amp	24.23 mm	25 ns
MK4202Q20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	20 ns
MK45180Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		10	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel		4KX10	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	MATCH OUTPUT; ON CHIP PARITY CHECKER/GENERATOR; FLASH CLEAR; LOCAL AND SNOOP PORT COMPARATOR	e0			YES	.13 Amp	24.23 mm	17 ns
MK4202Q17/05	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			250 mA	2048 words				20	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel		2KX20	2K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68					Not Qualified	40960 bit			e0				.05 Amp		17 ns
MK4202Q25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	25 ns
MK4202Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68		5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0			YES	.05 Amp	24.23 mm	17 ns
TH6S1651A0A	Toshiba	SRAM CARD		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				524288 words				16	MICROELECTRONIC ASSEMBLY							512KX16	512K				UNSPECIFIED		X-XXMA-X68					Not Qualified	8388608 bit									150 ns
TH6P1620A0	Toshiba	PSEUDO STATIC RAM		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				2097152 words				16	MICROELECTRONIC ASSEMBLY							2MX16	2M				UNSPECIFIED		X-XXMA-X68					Not Qualified	33554432 bit									150 ns
TH6S1625A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	512KX8	512K		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V			Not Qualified	4194304 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns
TH6P1651A0	Toshiba	PSEUDO STATIC RAM		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				524288 words				16	MICROELECTRONIC ASSEMBLY							512KX16	512K				UNSPECIFIED		X-XXMA-X68					Not Qualified	8388608 bit									150 ns
TH6P1610A0	Toshiba	PSEUDO STATIC RAM		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				1048576 words				16	MICROELECTRONIC ASSEMBLY							1MX16	1M				UNSPECIFIED		X-XXMA-X68					Not Qualified	16777216 bit									150 ns
TH6S1612A0A	Toshiba	SRAM CARD		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				131072 words				16	MICROELECTRONIC ASSEMBLY							128KX16	128K				UNSPECIFIED		X-XXMA-X68					Not Qualified	2097152 bit									150 ns
TH6S1610A0A	Toshiba	SRAM CARD		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				1048576 words				16	MICROELECTRONIC ASSEMBLY							1MX16	1M				UNSPECIFIED		X-XXMA-X68					Not Qualified	16777216 bit									150 ns
TH6S1612A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	256KX8	256K		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V			Not Qualified	2097152 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns
TH6S1625A0A	Toshiba	SRAM CARD		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				262144 words				16	MICROELECTRONIC ASSEMBLY							256KX16	256K				UNSPECIFIED		X-XXMA-X68					Not Qualified	4194304 bit									150 ns
TH6S1651A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	1MX8	1M		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V			Not Qualified	8388608 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns
TH6S1610A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	2MX8	2M		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V			Not Qualified	16777216 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns
7133SA55GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words		5		16	GRID ARRAY				2.54 mm	85 Cel		2KX16	2K		-40 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V		29.464 mm		32768 bit	4.5 V							29.464 mm	55 ns
7133SA70JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	CHIP CARRIER					70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								70 ns
7133SA25GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		16	GRID ARRAY				2.54 mm	85 Cel		2KX16	2K		-40 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V		29.464 mm		32768 bit	4.5 V							29.464 mm	25 ns
7133SA25GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11		SRAMs	2.54 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	29.464 mm	25 ns
7133SA90GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	GRID ARRAY					125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V				32768 bit	4.5 V								90 ns
7133LA55FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK				1.27 mm	85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-F68		5.5 V		24.0792 mm		32768 bit	4.5 V							24.0792 mm	55 ns
7133SA90FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ		SRAMs	1.27 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm	24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.004 Amp	24.0792 mm	90 ns
7133SA35JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	325 mA	2048 words		5		16	CHIP CARRIER					125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								35 ns
7133SA55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	CHIP CARRIER					70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								55 ns
7133SA55JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	315 mA	2048 words		5		16	CHIP CARRIER					125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								55 ns
7133LA70FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK				1.27 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-F68		5.5 V		24.0792 mm		32768 bit	4.5 V							24.0792 mm	70 ns
7133SA25FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		16	FLATPACK				1.27 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-F68		5.5 V		24.0792 mm		32768 bit	4.5 V							24.0792 mm	25 ns
7133SA20G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11		SRAMs	2.54 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	3.683 mm	29.464 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240		.015 Amp	29.464 mm	20 ns
7133SA55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	CHIP CARRIER					70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V				32768 bit	4.5 V								55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.