71 SRAM 6

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M69KB048BD70ZA8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-30 Cel		BOTTOM	R-XBGA-B71	1.95 V	1.2 mm	7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	260		11 mm	70 ns
M69KB048BD70ZA8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-XBGA-B71	1.95 V	1.2 mm	7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0				11 mm	70 ns
M69AB048BD70ZA8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-30 Cel		BOTTOM	R-XBGA-B71	1.95 V	1.2 mm	7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	260	.00001 Amp	11 mm	70 ns
M69AB048BD70W8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-30 Cel		UPPER	X-XUUC-N	1.95 V			Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	NOT SPECIFIED	.00001 Amp		70 ns
M69AB048BD70ZA8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-XBGA-B71	1.95 V	1.2 mm	7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0			.00001 Amp	11 mm	70 ns
M69AB048BD70W8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-30 Cel	TIN LEAD	UPPER	X-XUUC-N	1.95 V			Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0			.00001 Amp		70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.