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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
23K256-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	262144 bit	2.7 V	e3	40	260	NO	.000004 Amp	4.9 mm
23K640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V	e3	40	260	NO	.000004 Amp	4.9 mm
23LC1024T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.9 mm
23LC1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.9 mm
23LC1024T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.4 mm
CY14B101Q2-LHXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm
APS6404L-3SQR-SN	Ap Memory Technology	HYPERRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel		8MX8	8M		-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	133 MHz	3.9 mm		67108864 bit	2.7 V					.00025 Amp	4.9 mm
CY14B101Q2-LHXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm
23LCV1024T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V	e3	30	260	NO	.00001 Amp	4.9 mm
23A1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	2.2 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	1.7 V	e3	40	260	NO	.000004 Amp	4.4 mm
CAT24C44VI-GT3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e4	30	260		.00003 Amp	4.9 mm
CAT24C44VI-G	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e4		260		.00003 Amp	4.9 mm	375 ns
CAT24C44VI-T3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e3	30	260		.00003 Amp	4.9 mm
CAT24C44VI-TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		16X16	16		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e3					4.9 mm	375 ns
CAT24C44VIT3	Catalyst Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		16X16	16		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e3					4.9 mm
23K256T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V	e3	40	260	NO	.000004 Amp	4.4 mm
23K640-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.7 V	e3	40	260	NO	.000004 Amp	4.4 mm
CAT24C44VI	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V	e3		260		.00003 Amp	4.9 mm	375 ns
N25S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.1 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V	e3	30	260		.000004 Amp	4.4 mm
23LCV1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.9 mm
23A1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	2.2 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	1.7 V	e3	40	260	NO	.000004 Amp	4.9 mm
23LC512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	524288 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.9 mm
23K256T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	262144 bit	2.7 V	e3	40	260	NO	.000004 Amp	4.9 mm
23LC1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V	e3		260	NO	.00001 Amp	4.4 mm
APS6404L-3SQR-ZR	Ap Memory Technology	HYPERRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		.5 mm	85 Cel		8MX8	8M		-25 Cel		DUAL	1	R-PDSO-N8		3.6 V	.5 mm	133 MHz	2 mm		67108864 bit	2.7 V					.00025 Amp	3 mm
23LCV512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON			8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm		524288 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.9 mm
23LC1024-I/SNVAO	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	20 MHz	3.9 mm		1048576 bit	2.5 V	e3			NO	.00001 Amp	4.9 mm
23LCV1024-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		5.5 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	1048576 bit	2.5 V	e3			NO	.00001 Amp	9.271 mm
23LCV1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.4 mm
23LC512-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	SEPARATE	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		5.5 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	524288 bit	2.5 V	e3			NO	.00001 Amp	9.271 mm
23LC512-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	524288 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.4 mm
23LCV512-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm		524288 bit	2.5 V	e3	40	260	NO	.00001 Amp	4.4 mm
23A256-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	1.5 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	262144 bit	1.5 V	e3	40	260	NO	.000001 Amp	4.9 mm
APS6404L-3SQRX-SN	Ap Memory Technology	HYPERRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel		8MX8	8M		-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	133 MHz	3.9 mm		67108864 bit	2.7 V					.00025 Amp	4.9 mm
IS66WVS2M8BLL-104KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel		2MX8	2M	2.7 V	-40 Cel		DUAL	1	R-XDSO-N8		3.6 V	.8 mm	104 MHz	5 mm		16777216 bit	2.7 V				NO	.0002 Amp	6 mm
IS66WVS2M8BLL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel		2MX8	2M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	104 MHz	3.9 mm		16777216 bit	2.7 V				NO	.0002 Amp	4.9 mm
IS66WVS2M8BLL-104TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32		.8 mm	85 Cel		2MX8	2M	2.7 V	-40 Cel		DUAL	1	R-XDSO-N8		3.6 V	.6 mm	104 MHz	3 mm		16777216 bit	2.7 V				NO	.0002 Amp	4 mm
48L512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON			8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm		524288 bit	2.7 V	e3			NO	.0002 Amp	4.9 mm
23A640-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		1.95 V	5.334 mm	16 MHz	7.62 mm	Not Qualified	65536 bit	1.5 V	e3			NO	.000001 Amp	9.271 mm
CY14E101J2-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V	e4	30	260		.00015 Amp	4.889 mm
N01S818HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	2.2 V	1.1 mm		3 mm		1048576 bit	1.7 V	e3	30	260			4.4 mm
CY14B101Q2A-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.7 V	e3	20	260		.00015 Amp	4.889 mm
23K640-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V	e3	40	260	NO	.00001 Amp	4.4 mm
N01S818HAT22IT	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	2.2 V	1.1 mm		3 mm		1048576 bit	1.7 V	e3	30	260			4.4 mm
48L512T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON			8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm		524288 bit	2.7 V	e3			NO	.0002 Amp	4.9 mm
48LM01T-I/SM	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON			8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	2.03 mm	66 MHz	5.25 mm		1048576 bit	2.7 V	e3		260	NO	.0002 Amp	5.26 mm
23K256-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	262144 bit	2.7 V	e3			NO	.000004 Amp	9.271 mm
23K640-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V	e3	40	260	NO	.00001 Amp	4.9 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.