Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK |
85 Cel |
4KX9 |
4K |
-40 Cel |
QUAD |
S-PQFP-G80 |
5.5 V |
36864 bit |
4.5 V |
PIPELINED ARCHITECTURE |
10 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK |
70 Cel |
4KX9 |
4K |
0 Cel |
QUAD |
S-PQFP-G80 |
5.5 V |
36864 bit |
4.5 V |
PIPELINED ARCHITECTURE |
10 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK |
70 Cel |
4KX9 |
4K |
0 Cel |
QUAD |
S-PQFP-G80 |
5.5 V |
36864 bit |
4.5 V |
PIPELINED ARCHITECTURE |
8 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2200 mA |
65536 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX36 |
64K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
2359296 bit |
e0 |
25 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK |
70 Cel |
4KX9 |
4K |
0 Cel |
QUAD |
S-PQFP-G80 |
5.5 V |
36864 bit |
4.5 V |
PIPELINED ARCHITECTURE |
8 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
310 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
25 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
295 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
20 |
240 |
.01 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
15 ns |
|||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16384 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX36 |
16K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
589824 bit |
e0 |
15 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
35 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
55 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
270 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
14 mm |
55 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
25 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
25 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
295 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
e0 |
14 mm |
25 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
25 ns |
||||||||||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
65536 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX36 |
64K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
2359296 bit |
e0 |
15 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
4KX9 |
4K |
0 Cel |
Matte Tin (Sn) |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE; SELF TIMED WRITE |
e3 |
30 |
260 |
YES |
14 mm |
12 ns |
||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
55 ns |
||||||||||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2200 mA |
65536 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX36 |
64K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
2359296 bit |
e0 |
25 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
55 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
270 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
295 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
35 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
270 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
255 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
4KX9 |
4K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE; SELF TIMED WRITE |
e3 |
YES |
14 mm |
20 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
305 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
35 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
SYNCHRONOUS |
290 mA |
4096 words |
COMMON |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
125 Cel |
3-STATE |
4KX9 |
4K |
4.5 V |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e0 |
20 |
240 |
.015 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
9437184 bit |
e0 |
15 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
35 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
4KX9 |
4K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE; SELF TIMED WRITE |
e3 |
YES |
14 mm |
12 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
325 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
310 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
55 ns |
||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2200 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
9437184 bit |
e0 |
25 ns |
|||||||||||||||||||||||||
Renesas Electronics |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2200 mA |
16384 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX36 |
16K |
0 Cel |
TIN LEAD |
SINGLE |
R-PSMA-N80 |
Not Qualified |
589824 bit |
e0 |
25 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
230 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G80 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
YES |
14 mm |
55 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.