Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
1 |
Not Qualified |
1048576 bit |
.01 Amp |
20 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
1 |
Not Qualified |
1048576 bit |
.01 Amp |
70 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.0003 Amp |
35 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
1 |
Not Qualified |
1048576 bit |
.01 Amp |
70 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
262144 words |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.0003 Amp |
25 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
1 |
Not Qualified |
1048576 bit |
.01 Amp |
55 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
110 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.0005 Amp |
35 ns |
||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
25 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.5 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.0003 Amp |
15 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
262144 words |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
35 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
45 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.0005 Amp |
25 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
1 |
Not Qualified |
1048576 bit |
.01 Amp |
45 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.005 Amp |
45 ns |
||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
e0 |
.01 Amp |
25 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.005 Amp |
45 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
110 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.0005 Amp |
35 ns |
||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class C |
FLAT |
PARALLEL |
ASYNCHRONOUS |
150 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-CDFP-F28 |
5.5 V |
2.921 mm |
9.779 mm |
Not Qualified |
65536 bit |
4.5 V |
TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY |
e0 |
YES |
.005 Amp |
18.285 mm |
70 ns |
||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.0005 Amp |
55 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
262144 words |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
55 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.005 Amp |
15 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
55 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
45 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.0003 Amp |
55 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
110 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.001 Amp |
25 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.005 Amp |
25 ns |
||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
1 |
Not Qualified |
262144 bit |
.01 Amp |
25 ns |
||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
45 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.01 Amp |
55 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
70 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
262144 words |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
45 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.001 Amp |
25 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.005 Amp |
45 ns |
||||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.0003 Amp |
70 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
110 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
DUAL |
R-XDFP-F28 |
Not Qualified |
262144 bit |
.0005 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
20 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
1 |
Not Qualified |
1048576 bit |
.01 Amp |
35 ns |
|||||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.005 Amp |
70 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
140 mA |
262144 words |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
25 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
110 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.0003 Amp |
20 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
125 mA |
262144 words |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
256KX4 |
256K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
35 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX1 |
1M |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
55 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
65536 bit |
e0 |
.005 Amp |
70 ns |
|||||||||||||||||||||
Micron Technology |
STANDARD SRAM |
MILITARY |
32 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
115 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
FL32,.4 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-55 Cel |
DUAL |
R-XDFP-F32 |
Not Qualified |
1048576 bit |
.01 Amp |
45 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.