HVSON SRAM 17

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length
CY14B101Q2-LHXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm
CY14B101Q2-LHXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm
APS6404L-3SQR-ZR	Ap Memory Technology	HYPERRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		.5 mm	85 Cel		8MX8	8M		-25 Cel		DUAL	1	R-PDSO-N8		3.6 V	.5 mm	133 MHz	2 mm		67108864 bit	2.7 V					.00025 Amp	3 mm
IS66WVS2M8BLL-104KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel		2MX8	2M	2.7 V	-40 Cel		DUAL	1	R-XDSO-N8		3.6 V	.8 mm	104 MHz	5 mm		16777216 bit	2.7 V				NO	.0002 Amp	6 mm
IS66WVS2M8BLL-104TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32		.8 mm	85 Cel		2MX8	2M	2.7 V	-40 Cel		DUAL	1	R-XDSO-N8		3.6 V	.6 mm	104 MHz	3 mm		16777216 bit	2.7 V				NO	.0002 Amp	4 mm
IS66WVS4M8ALL-104KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-XDSO-N8		1.95 V	.8 mm	104 MHz	5 mm		33554432 bit	1.65 V				NO	.0002 Amp	6 mm
IS66WVS4M8ALL-104TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32		.8 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-XDSO-N8		1.95 V	.6 mm	104 MHz	3 mm		33554432 bit	1.65 V				NO	.0002 Amp	4 mm
APS1604M-3SQR-ZR	Ap Memory Technology	PSEUDO STATIC RAM		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	7 mA	2097152 words		3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		.5 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-XDSO-N8		3.6 V	.5 mm	133 MHz	2 mm		16777216 bit	2.7 V				NO	.00015 Amp	3 mm
CY14B256Q2-LHXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	32768 words		3	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		5 mm	Not Qualified	262144 bit	2.7 V	e4	30	260		.005 Amp	6 mm
CY14B101Q1-LHXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm
CY14B101Q1-LHXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	1048576 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm
CY14B512Q1-LHXI	Infineon Technologies	NON-VOLATILE SRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-N8		3.6 V	.8 mm	40 MHz	5 mm		524288 bit	2.7 V				NO	.005 Amp	6 mm
CY14B512Q1-LHXIT	Infineon Technologies	NON-VOLATILE SRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-N8		3.6 V	.8 mm	40 MHz	5 mm		524288 bit	2.7 V				NO	.005 Amp	6 mm
CY14B512Q2-LHXIT	Infineon Technologies	NON-VOLATILE SRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-N8		3.6 V	.8 mm	40 MHz	5 mm		524288 bit	2.7 V				NO	.005 Amp	6 mm
CY14B512Q3-LHXI	Infineon Technologies	NON-VOLATILE SRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-N8		3.6 V	.8 mm	40 MHz	5 mm		524288 bit	2.7 V				NO	.005 Amp	6 mm
CY14B512Q3-LHXIT	Infineon Technologies	NON-VOLATILE SRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-N8		3.6 V	.8 mm	40 MHz	5 mm		524288 bit	2.7 V				NO	.005 Amp	6 mm
CY14B512Q2-LHXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-N8	3	3.6 V	.8 mm	40 MHz	5 mm	Not Qualified	524288 bit	2.7 V	e4	30	260	NO	.005 Amp	6 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.