Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
210 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
325 mA |
32768 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
INTERRUPT FLAG |
e3 |
30 |
260 |
YES |
.0015 Amp |
10 mm |
25 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.015 Amp |
10 mm |
55 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
395 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3 V |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.005 Amp |
14 mm |
15 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
131072 words |
COMMON |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX9 |
128K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
14 mm |
20 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
2 V |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
20 |
240 |
.0015 Amp |
14 mm |
90 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
10 mm |
100 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
85 Cel |
1KX8 |
1K |
-40 Cel |
QUAD |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
10 mm |
25 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
145 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
85 Cel |
1KX8 |
1K |
-40 Cel |
QUAD |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.005 Amp |
10 mm |
35 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
135 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
85 Cel |
1KX8 |
1K |
-40 Cel |
QUAD |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.005 Amp |
10 mm |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
135 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
70 Cel |
1KX8 |
1K |
3 V |
0 Cel |
QUAD |
2 |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.005 Amp |
10 mm |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
70 Cel |
1KX8 |
1K |
3 V |
0 Cel |
QUAD |
2 |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.005 Amp |
10 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
70 Cel |
1KX8 |
1K |
2 V |
0 Cel |
QUAD |
2 |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.0015 Amp |
10 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
115 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
70 Cel |
1KX8 |
1K |
2 V |
0 Cel |
QUAD |
2 |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.0015 Amp |
10 mm |
35 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
105 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
70 Cel |
1KX8 |
1K |
2 V |
0 Cel |
QUAD |
2 |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.0015 Amp |
10 mm |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
145 mA |
1024 words |
COMMON |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
70 Cel |
1KX8 |
1K |
3 V |
0 Cel |
QUAD |
2 |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
8192 bit |
3 V |
YES |
.005 Amp |
10 mm |
35 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.005 Amp |
20 mm |
12 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e3 |
YES |
20 mm |
30 ns |
|||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
.03 Amp |
20 mm |
12 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
370 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e3 |
30 |
260 |
.004 Amp |
14 mm |
20 ns |
||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
340 mA |
65536 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
4.5 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
14 mm |
15 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
8192 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX18 |
8K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
30 |
260 |
.0025 Amp |
14 mm |
25 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
1048576 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
14 mm |
20 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
10 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
440 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
e3 |
30 |
260 |
YES |
.015 Amp |
20 mm |
15 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e3 |
14 mm |
90 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
10 mm |
100 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG |
e3 |
30 |
260 |
YES |
.0015 Amp |
10 mm |
25 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
3-STATE |
16KX16 |
16K |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
YES |
20 mm |
25 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
2048 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e3 |
14 mm |
25 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
2048 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e3 |
14 mm |
25 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
270 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
30 |
260 |
.03 Amp |
10 mm |
25 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFL48,.75SQ |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
.004 Amp |
10 mm |
35 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
4 |
R-PQFP-G128 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE |
e3 |
YES |
20 mm |
35 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
10 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class B |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.00003 Amp |
14 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
.03 Amp |
20 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
215 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e3 |
14 mm |
55 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.03 Amp |
20 mm |
3.6 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
340 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
4K X 16 DUAL PORT SRAM |
e0 |
20 |
240 |
.00003 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
e3 |
30 |
260 |
YES |
.015 Amp |
20 mm |
10 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
3 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
240 |
.003 Amp |
14 mm |
20 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
155 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
30 |
260 |
.0025 Amp |
14 mm |
35 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.