LFQFP SRAM 1,382

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT709279S12PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel	3-STATE	32KX16	32K		0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			YES		14 mm	25 ns
IDT70V27L35PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	235 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e3	30	260		.006 Amp	14 mm	35 ns
70V639S12PRFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V		e3	30	260	YES	.015 Amp	20 mm	12 ns
IDT7143SA90PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		2KX16	2K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e3					14 mm	90 ns
IDT71421SA20TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.015 Amp	10 mm	20 ns
IDT70V27S25PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	245 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e3	30	260		.006 Amp	14 mm	25 ns
IDT70V631S12PRFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		256KX18	256K		0 Cel	MATTE TIN	QUAD		R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.15 V		e3					20 mm	12 ns
IDT7140SA35TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	10 mm	35 ns
IDT70V9279L12PRFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		32KX16	32K		0 Cel	MATTE TIN	QUAD		R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					20 mm	25 ns
IDT70V9279S7PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	335 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87		SRAMs	.5 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.005 Amp	20 mm	7.5 ns
70V639S10PRFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		128KX18	128K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V		e3					20 mm	10 ns
IDT7024L55PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.004 Amp	14 mm	55 ns
IDT7133SA90PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	125 Cel		2KX16	2K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e3					14 mm	90 ns
IDT70V38L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		64KX18	64K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3 V		e3					14 mm	15 ns
IDT709099L9PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					14 mm	20 ns
IDT70V34S15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	215 mA	4096 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	4KX18	4K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	73728 bit	3 V		e3	30	260		.005 Amp	14 mm	15 ns
IDT70V9289LPRFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		64KX16	64K		-40 Cel	TIN LEAD	QUAD		R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e0					20 mm
IDT7130SA55TFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	10 mm	55 ns
709289L12PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	355 mA	65536 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm	50 MHz	14 mm	Not Qualified	1048576 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.003 Amp	14 mm	25 ns
71321LA35TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	10 mm	35 ns
IDT7024L20PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	320 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V	4K X 16 DUAL PORT SRAM	e0	20	240		.004 Amp	14 mm	20 ns
IDT71321LA25TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	10 mm	25 ns
IDT70V9289L7PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	1048576 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.002 Amp	20 mm	18 ns
IDT70V9099L6PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	1048576 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.002 Amp	14 mm	15 ns
IDT7052L25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16		SRAMs	.4 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3	5.5 V	1.6 mm		14 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e3	40	260		.0018 Amp	14 mm	25 ns
70V25S55PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	8192 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	8KX16	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	30	260		.005 Amp	14 mm	55 ns
IDT71321SA25TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3	30	260		.015 Amp	10 mm	25 ns
IDT70261S20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel	3-STATE	16KX16	16K		0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e3			YES		14 mm	20 ns
IDT7025S55PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8KX16	8K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3					14 mm	55 ns
7130SA25TFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	10 mm	25 ns
71V6570375PFGI	Renesas Electronics	ZBT SRAM		100	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.7X.9			.65 mm	85 Cel	3-STATE	256KX36	256K	3.135 V	-40 Cel		QUAD		R-PQFP-F100		3.465 V	1.6 mm	100 MHz	14 mm		9437184 bit	3.135 V	FLOW-THROUGH				YES	.06 Amp	22 mm	7.5 ns
71V6570385PFGI8	Renesas Electronics	ZBT SRAM		100	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	245 mA	262144 words	COMMON	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.7X.9			.65 mm	85 Cel	3-STATE	256KX36	256K	3.135 V	-40 Cel		QUAD		R-PQFP-F100		3.465 V	1.6 mm	90.9 MHz	14 mm		9437184 bit	3.135 V	FLOW-THROUGH				YES	.06 Amp	22 mm	8.5 ns
IDT7025L25PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel	3-STATE	8KX16	8K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3			YES		14 mm	25 ns
IDT70V9279L7PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	290 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87		SRAMs	.5 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.003 Amp	20 mm	7.5 ns
IDT7052L35PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH				.4 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-PQFP-G120	4	5.5 V	1.6 mm		14 mm	Not Qualified	16384 bit	4.5 V		e0	30	240			14 mm	35 ns
IDT70V9269S6PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	395 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	262144 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.005 Amp	20 mm	6.5 ns
IDT71421LA35TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG	e3	30	260	YES	.0015 Amp	10 mm	35 ns
IDT70V9289L9PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	230 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	1048576 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.002 Amp	20 mm	20 ns
IDT7130SA100TFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFL48,.75SQ		SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e0				.015 Amp	10 mm	100 ns
7130SA55TFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFL48,.75SQ		SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e0				.015 Amp	10 mm	55 ns
IDT70V9269L7PRF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	290 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	TIN LEAD	QUAD	2	R-PQFP-G128	3	3.6 V	1.6 mm	83 MHz	14 mm	Not Qualified	262144 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	30	225		.003 Amp	20 mm	18 ns
IDT7130LA100TFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.004 Amp	10 mm	100 ns
IDT7027L55PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel	3-STATE	32KX16	32K		0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e3			YES		14 mm	55 ns
7130SA55TFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.03 Amp	10 mm	55 ns
IDT7140SA25TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	30	260	YES	.015 Amp	10 mm	25 ns
70V261L35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V		e3	30	260		.003 Amp	14 mm	35 ns
IDT7035S20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		18	FLATPACK, LOW PROFILE, FINE PITCH		18		.5 mm	70 Cel		8KX18	8K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	147456 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN	e3					14 mm	20 ns
IDT7143LA90PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	125 Cel		2KX16	2K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e3					14 mm	90 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.