LGA SRAM 4

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CYPT1545AV18-250GLMB	Infineon Technologies	QDR SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		1.8	36	GRID ARRAY		1.27 mm	125 Cel		2MX36	2M		-55 Cel	BOTTOM		R-CBGA-N165	1	1.9 V	3.07 mm		21 mm	75497472 bit	1.7 V	e0			25 mm	.85 ns
CYPT1542AV18-250GLMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1700 mA	4194304 words	COMMON	1.8	18	GRID ARRAY	LGA165,11X15,50	1.27 mm	125 Cel	3-STATE	4MX18	4M	1.7 V	-55 Cel	BOTTOM	2	R-CBGA-N165	1	1.9 V	3.07 mm	250 MHz	21 mm	75497472 bit	1.7 V	e0	NO	.66 Amp	25 mm	.85 ns
CYPT1543AV18-250GLMB	Infineon Technologies	QDR SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8	18	GRID ARRAY		1.27 mm	125 Cel		4MX18	4M		-55 Cel	BOTTOM		R-CBGA-N165	1	1.9 V	3.07 mm		21 mm	75497472 bit	1.7 V	e0			25 mm	.85 ns
CYPT1544AV18-250GLMB	Infineon Technologies	QDR II PLUS SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1700 mA	2097152 words	COMMON	1.8	36	GRID ARRAY	LGA165,11X15,50	1.27 mm	125 Cel	3-STATE	2MX36	2M	1.7 V	-55 Cel	BOTTOM	2	R-CBGA-N165	1	1.9 V	3.07 mm	250 MHz	21 mm	75497472 bit	1.7 V	e0	NO	.66 Amp	25 mm	.85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.