Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
2.8 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e3 |
40 |
260 |
.04 Amp |
20 mm |
2.8 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.135 V |
0 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
YES |
.04 Amp |
20 mm |
6.5 ns |
||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX36 |
512K |
0 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e4 |
20 mm |
6.5 ns |
|||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX36 |
1M |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.135 V |
0 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
YES |
.04 Amp |
20 mm |
3.5 ns |
||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX18 |
1M |
0 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
4194304 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
75497472 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX36 |
1M |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX36 |
512K |
0 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
14 mm |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX36 |
512K |
0 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
14 mm |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3 ns |
||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
MILITARY |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
125 Cel |
256KX36 |
256K |
-55 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
260 |
20 mm |
6.5 ns |
||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX18 |
1M |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e4 |
40 |
260 |
.04 Amp |
20 mm |
6.5 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX18 |
1M |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
260 |
20 mm |
6.5 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX18 |
512K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
20 mm |
6.5 ns |
|||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
8 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e3 |
40 |
260 |
.04 Amp |
20 mm |
2.8 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
305 mA |
2097152 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
2.38 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
75497472 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
6.5 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
4 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
4194304 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
75497472 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
|||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
158 mA |
1048576 words |
COMMON |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.135 V |
0 Cel |
PURE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
200 MHz |
14 mm |
18874368 bit |
3.135 V |
PIPE LINED ARCHITECTURE |
260 |
YES |
.075 Amp |
20 mm |
3 ns |
|||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
4 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
4194304 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
75497472 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
2097152 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
2.375 V |
0 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
75497472 bit |
2.375 V |
e3 |
40 |
260 |
YES |
.12 Amp |
20 mm |
3.4 ns |
|||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX32 |
128K |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4194304 bit |
3.135 V |
FLOW-THRU ARCHITECTURE |
e4 |
40 |
260 |
.04 Amp |
20 mm |
8 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
2.5 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX36 |
1M |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
14 mm |
37748736 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.2 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX36 |
512K |
0 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
260 |
20 mm |
8.5 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
435 mA |
1048576 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.12 Amp |
20 mm |
2.6 ns |
||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
40 |
260 |
20 mm |
3.4 ns |
|||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX18 |
1M |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
260 |
20 mm |
6.5 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
450 mA |
4194304 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3.4 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.135 V |
0 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
YES |
.04 Amp |
20 mm |
6.5 ns |
||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
3.4 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e4 |
40 |
260 |
.04 Amp |
20 mm |
8.5 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
MILITARY |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
125 Cel |
512KX36 |
512K |
-55 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
3.4 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
8 ns |
|||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX36 |
1M |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
178 mA |
524288 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.135 V |
0 Cel |
PURE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
200 MHz |
14 mm |
18874368 bit |
3.135 V |
PIPE LINED ARCHITECTURE |
260 |
YES |
.08 Amp |
20 mm |
3 ns |
|||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
400 mA |
4194304 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
75497472 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3.4 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
385 mA |
1048576 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.12 Amp |
20 mm |
3.2 ns |
||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
340 mA |
2097152 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
e0 |
.1 Amp |
20 mm |
3 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.