Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
2.5 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX18 |
1M |
0 Cel |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY |
20 mm |
7.5 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
320 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
20 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
25 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
14 mm |
15 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
LOW POWER STANDBY; BATTERY BACK UP |
e3 |
14 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
315 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
14 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
2.5 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX18 |
1M |
0 Cel |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY |
20 mm |
3.5 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
131072 bit |
4.5 V |
e3 |
14 mm |
55 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
4KX9 |
4K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
14 mm |
20 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
280 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
25 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
5 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
131072 bit |
4.5 V |
e3 |
14 mm |
35 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
14 mm |
20 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
30 |
240 |
.03 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
160 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.01 Amp |
20 mm |
7 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
40 |
260 |
14 mm |
35 ns |
||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.3 ns |
|||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
265 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
117 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.05 Amp |
20 mm |
7.5 ns |
||||||||||
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e0 |
20 mm |
4.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX32 |
64K |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
e0 |
20 mm |
4 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
190 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
NO |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
87 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
30 |
260 |
YES |
.035 Amp |
20 mm |
8.5 ns |
|||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
225 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
90 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
8.5 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX32 |
64K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
e3 |
20 mm |
12 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
95 mA |
2048 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
3 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
35 ns |
|||||||||||
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
2.5 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX36 |
1M |
0 Cel |
TIN BISMUTH |
QUAD |
R-PQFP-G100 |
2.625 V |
1.7 mm |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e6 |
NOT SPECIFIED |
NOT SPECIFIED |
20 mm |
7.5 ns |
|||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e3 |
30 |
260 |
.004 Amp |
14 mm |
20 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
5 ns |
||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
32KX32 |
32K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3.1 V |
20 mm |
8 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
70 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.04 Amp |
20 mm |
5 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
310 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.045 Amp |
20 mm |
4.2 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
30 |
240 |
.015 Amp |
14 mm |
100 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
270 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.06 Amp |
20 mm |
5 ns |
||||||||||
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
COMMON |
2.5 |
2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
2.625 V |
1.7 mm |
117 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.06 Amp |
20 mm |
7.5 ns |
|||||||||||||||
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
2.625 V |
1.7 mm |
117 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.06 Amp |
20 mm |
7.5 ns |
|||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX18 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
4.2 ns |
|||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
95 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
8 ns |
||||||||||
Renesas Electronics |
CACHE DRAM MODULE |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
190 mA |
262144 words |
COMMON |
3.3 |
2.5,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
87 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e0 |
20 |
225 |
.035 Amp |
20 mm |
8.5 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
LOW POWER STANDBY; BATTERY BACK UP |
e3 |
40 |
260 |
14 mm |
25 ns |
|||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
195 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
131072 words |
COMMON |
3.3 |
2.5,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
183 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.035 Amp |
20 mm |
3.3 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
8192 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.015 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
340 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.05 Amp |
20 mm |
3.5 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
16KX8 |
16K |
2 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
70 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
285 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
117 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
7.5 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX18 |
512K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
30 |
260 |
20 mm |
4.2 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
40 |
260 |
YES |
14 mm |
25 ns |
|||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.8 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.