QFF SRAM 1,362

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

IDT7142LA35FG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

MATTE TIN

QUAD

2

S-CQFP-F48

5.5 V

2.7432 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.0015 Amp

35 ns

7132LA100FG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

110 mA

2048 words

5

8

FLATPACK

70 Cel

2KX8

2K

0 Cel

MATTE TIN

QUAD

S-CQFP-F48

5.5 V

16384 bit

4.5 V

e3

100 ns

IDT7140SA100FB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

1

Not Qualified

8192 bit

e0

.03 Amp

100 ns

IDT7024L20FB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

320 mA

4096 words

COMMON

5

5

16

FLATPACK

QFL84,1.2SQ

SRAMs

1.27 mm

125 Cel

3-STATE

4KX16

4K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-PQFP-F84

5.5 V

3.556 mm

29.21 mm

Not Qualified

65536 bit

4.5 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

e0

YES

.004 Amp

29.21 mm

20 ns

IDT7140LA35FB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

FLAT

PARALLEL

ASYNCHRONOUS

170 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-CQFP-F48

5.5 V

2.7432 mm

Not Qualified

8192 bit

4.5 V

e0

.004 Amp

35 ns

IDT7134LA20FG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

240 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

MATTE TIN

QUAD

2

S-XQFP-F48

Not Qualified

32768 bit

e3

.0015 Amp

20 ns

IDT7005S70FGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

300 mA

8192 words

COMMON

5

5

8

FLATPACK

QFL68,.95SQ

SRAMs

1.27 mm

125 Cel

3-STATE

8KX8

8K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-PQFP-F68

5.5 V

3.683 mm

24.0792 mm

Not Qualified

65536 bit

4.5 V

e3

.03 Amp

24.0792 mm

70 ns

IDT7140LA100FI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

1

Not Qualified

8192 bit

e0

.004 Amp

100 ns

IDT7130LA100FGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

MATTE TIN

QUAD

2

S-XQFP-F48

Not Qualified

8192 bit

e3

.004 Amp

100 ns

IDT7134LA55FGB8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

220 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

MATTE TIN

QUAD

2

S-XQFP-F48

Not Qualified

32768 bit

e3

.004 Amp

55 ns

IDT7143LA25FI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

300 mA

2048 words

COMMON

5

5

16

FLATPACK

QFL68,.95SQ

SRAMs

1.27 mm

85 Cel

3-STATE

2KX16

2K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-CQFP-F68

5.5 V

3.683 mm

24.0792 mm

Not Qualified

32768 bit

4.5 V

e0

.004 Amp

24.0792 mm

25 ns

71V547S80PFGI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

QFF

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

FLAT

PARALLEL

SYNCHRONOUS

260 mA

131072 words

COMMON

3.3

3.3

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

128KX36

128K

3.14 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-F100

3

3.465 V

95 MHz

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH

e3

30

260

.045 Amp

5 ns

7130LA55FI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

1

Not Qualified

8192 bit

e0

.004 Amp

55 ns

IDT7143LA70FG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

5

16

FLATPACK

1.27 mm

70 Cel

2KX16

2K

0 Cel

MATTE TIN

QUAD

S-CQFP-F68

5.5 V

3.683 mm

24.0792 mm

Not Qualified

32768 bit

4.5 V

e3

24.0792 mm

70 ns

IDT7143LA55FB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

FLAT

PARALLEL

ASYNCHRONOUS

285 mA

2048 words

COMMON

5

5

16

FLATPACK

QFL68,.95SQ

SRAMs

1.27 mm

125 Cel

3-STATE

2KX16

2K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-CQFP-F68

5.5 V

3.683 mm

24.0792 mm

Not Qualified

32768 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

.004 Amp

24.0792 mm

55 ns

7134SA45FGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

FLAT

PARALLEL

ASYNCHRONOUS

280 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

4KX8

4K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-CQFP-F48

5.5 V

Not Qualified

32768 bit

4.5 V

e3

.03 Amp

45 ns

7134LA55FB8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

220 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

Not Qualified

32768 bit

e0

.004 Amp

55 ns

IDT7130SA100FGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-XQFP-F48

Not Qualified

8192 bit

e3

.03 Amp

100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.