QIP SRAM 14

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Maximum Access Time
7MB6039S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	4750 mA	32768 words	COMMON	5	5	60	IN-LINE	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX60	32K		TIN LEAD	QUAD		R-PQIP-P128		33 MHz	Not Qualified	1966080 bit		e0
7MB1008S55K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	620 mA	32768 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	524288 bit		e0	.065 Amp	55 ns
7MB6040S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4800 mA	16384 words	COMMON	5		64	MICROELECTRONIC ASSEMBLY	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	16KX64	16K		TIN LEAD	QUAD		R-PQMA-T128	5.5 V	33 MHz	Not Qualified	1048576 bit	4.5 V	e0		20 ns
7MB6049S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	120	QIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	3600 mA	16384 words	COMMON	5		60	MICROELECTRONIC ASSEMBLY	QI120,2.9/3.0,100	SRAMs	2.54 mm	70 Cel	3-STATE	16KX60	16K	4.5 V	TIN LEAD	QUAD		R-PQMA-T120	5.5 V	33 MHz	Not Qualified	983040 bit	4.5 V	e0	.75 Amp	20 ns
7MB1006S55K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	900 mA	65536 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	1048576 bit		e0	.125 Amp	55 ns
7MB1008S45K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	620 mA	32768 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	524288 bit		e0	.065 Amp	45 ns
7MB1006S45K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	900 mA	65536 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	1048576 bit		e0	.125 Amp	45 ns
IDT7MB6049S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	120	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	3600 mA	32768 words	COMMON			60	IN-LINE	QI120,2.9/3.0,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX60	32K	4.5 V	TIN LEAD	QUAD		R-PQIP-P120		33 MHz	Not Qualified	1966080 bit		e0	.75 Amp
IDT7MB6039S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	4750 mA	32768 words	COMMON	5	5	60	IN-LINE	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX60	32K		TIN LEAD	QUAD		R-PQIP-P128		33 MHz	Not Qualified	1966080 bit		e0
IDT7MB1006S45K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	900 mA	65536 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	1048576 bit		e0	.125 Amp	45 ns
IDT7MB1008S55K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	620 mA	32768 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	524288 bit		e0	.065 Amp	55 ns
IDT7MB6040S33K	Renesas Electronics	CACHE SRAM MODULE	COMMERCIAL	128	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	4800 mA	32768 words	COMMON			64	IN-LINE	QI128,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX64	32K		TIN LEAD	QUAD		R-PQIP-P128		33 MHz	Not Qualified	2097152 bit		e0
IDT7MB1008S45K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	620 mA	32768 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	524288 bit		e0	.065 Amp	45 ns
IDT7MB1006S55K	Renesas Electronics	MULTI-PORT SRAM MODULE	COMMERCIAL	132	QIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	900 mA	65536 words	COMMON	5	5	16	IN-LINE	QI132,2.1/2.3,100	SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	QUAD	2	R-PQIP-P132			Not Qualified	1048576 bit		e0	.125 Amp	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.