SIMM SRAM 185

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Maximum Access Time
DS2227-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		512KX8	512K			SINGLE	R-XSMA-N72	1	5.5 V		Not Qualified	4194304 bit	4.5 V	DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32		.28 Amp	70 ns
DS2217-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE	R-PSMA-N30				Not Qualified	1048576 bit				.025 Amp	200 ns
DS3803	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	300 mA	32768 words		5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		32KX32	32K		TIN LEAD	SINGLE	R-XSMA-N72		5.5 V		Not Qualified	1048576 bit	4.5 V	USER CONFIGURABLE AS 64K X 16 OR 128K X 8	e0		70 ns
DS2229	Analog Devices	SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	2 V	TIN LEAD	SINGLE	R-XSMA-N80		5.5 V	18.7706 mm	Not Qualified	8388608 bit	4.5 V	BATTERY BACKUP OPERATION	e0	.000008 Amp	85 ns
DS2219-120	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		HYBRID	NO LEAD			15 mA	1048576 words		5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		1MX9	1M			SINGLE	R-PSMA-N30				Not Qualified	9437184 bit				.015 Amp	120 ns
DS2219-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		HYBRID	NO LEAD			15 mA	1048576 words		5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		1MX9	1M			SINGLE	R-PSMA-N30				Not Qualified	9437184 bit				.015 Amp	150 ns
MCM44A256BSG15	NXP Semiconductors	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	1750 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80(UNSPEC)	SRAMs		70 Cel	3-STATE	256KX36	256K			SINGLE	R-PSMA-N80				Not Qualified	9437184 bit					15 ns
MCM44A256BSG17	NXP Semiconductors	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	1750 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80(UNSPEC)	SRAMs		70 Cel	3-STATE	256KX36	256K			SINGLE	R-PSMA-N80				Not Qualified	9437184 bit					17 ns
MCM44A256BSG12	NXP Semiconductors	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	1750 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80(UNSPEC)	SRAMs		70 Cel	3-STATE	256KX36	256K			SINGLE	R-PSMA-N80				Not Qualified	9437184 bit					12 ns
DS2229-100	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	4.5 V	TIN LEAD	SINGLE	R-XSMA-N80		5.5 V	18.1356 mm	Not Qualified	8388608 bit	4.5 V		e0	.06 Amp	100 ns
DS2217-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE	R-PSMA-N30				Not Qualified	1048576 bit				.025 Amp	120 ns
DS38464	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		3.3		40	MICROELECTRONIC ASSEMBLY				70 Cel		64KX40	64K		TIN LEAD	SINGLE	R-XSMA-N72		3.6 V		Not Qualified	2621440 bit	3 V		e0		70 ns
DS2227-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		512KX8	512K		TIN LEAD	SINGLE	R-XSMA-N72		5.5 V		Not Qualified	4194304 bit	4.5 V	DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32	e0	.28 Amp	120 ns
DS2217-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K			SINGLE	R-PSMA-N30				Not Qualified	1048576 bit				.025 Amp	150 ns
DS2229-120	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	4.5 V	TIN LEAD	SINGLE	R-XSMA-N80		5.5 V	18.1356 mm	Not Qualified	8388608 bit	4.5 V		e0	.06 Amp	120 ns
DS2227-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		512KX8	512K		TIN LEAD	SINGLE	R-XSMA-N72		5.5 V		Not Qualified	4194304 bit	4.5 V	DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32	e0	.28 Amp	100 ns
DS38464-070	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		3.3		40	MICROELECTRONIC ASSEMBLY				70 Cel		64KX40	64K		TIN LEAD	SINGLE	R-XSMA-N72		3.6 V		Not Qualified	2621440 bit	3 V		e0		70 ns
DS2229-85	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	2 V	TIN LEAD	SINGLE	R-XSMA-N80		5.5 V	18.7706 mm	Not Qualified	8388608 bit	4.5 V		e0	.000008 Amp	85 ns
THM8514S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			134 mA	524288 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K			SINGLE	R-PSMA-N30				Not Qualified	4194304 bit				.004 Amp	100 ns
THM91002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			450 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30			20.32 mm	Not Qualified	9437184 bit				.009 Amp	120 ns
THM81002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			400 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30			20.32 mm	Not Qualified	8388608 bit				.008 Amp	120 ns
THM81002S-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			560 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30			20.32 mm	Not Qualified	8388608 bit				.008 Amp	85 ns
THM91002S-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30			20.32 mm	Not Qualified	9437184 bit				.009 Amp	85 ns
THM8514S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			114 mA	524288 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K			SINGLE	R-PSMA-N30				Not Qualified	4194304 bit				.004 Amp	120 ns
THM81002S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			480 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30			20.32 mm	Not Qualified	8388608 bit				.008 Amp	100 ns
THM91002S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			540 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30			20.32 mm	Not Qualified	9437184 bit				.009 Amp	100 ns
7MP6086S25M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	TIN LEAD	SINGLE	R-PSMA-N72				Not Qualified	1179648 bit			e0	.8 Amp	40 ns
7MP4045S45M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	TIN LEAD	SINGLE	R-PSMA-N64			16.002 mm	Not Qualified	8388608 bit			e0	.08 Amp	45 ns
7MP4045S30M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	TIN LEAD	SINGLE	R-PSMA-N64			16.002 mm	Not Qualified	8388608 bit			e0	.08 Amp	30 ns
MC-421000C8B-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			480 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30				Not Qualified	8388608 bit				.008 Amp	100 ns
7MP6074S75M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	16KX36	16K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	589824 bit			e0		15 ns
MC-421000C9B-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			630 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30				Not Qualified	9437184 bit				.009 Amp	80 ns
7MP6074S50M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	2200 mA	16384 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	16KX36	16K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	589824 bit			e0		25 ns
7MP6084S75M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	64KX36	64K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	2359296 bit			e0		15 ns
MC-421000C9B-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			540 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30				Not Qualified	9437184 bit				.009 Amp	100 ns
7MP6094S50M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	2200 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	9437184 bit			e0		25 ns
7MP6094S75M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	9437184 bit			e0		15 ns
MC-421000C8B-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			400 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30				Not Qualified	8388608 bit				.008 Amp	120 ns
7MP6086S50M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1150 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	TIN LEAD	SINGLE	R-PSMA-N72				Not Qualified	1179648 bit			e0		19 ns
MC-421000C9B-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			450 mA	1048576 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M			SINGLE	R-PSMA-N30				Not Qualified	9437184 bit				.009 Amp	120 ns
MC-421000C8B-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			560 mA	1048576 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M			SINGLE	R-PSMA-N30				Not Qualified	8388608 bit				.008 Amp	80 ns
7MP6084S50M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	2200 mA	65536 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	64KX36	64K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	2359296 bit			e0		25 ns
IDT7MP6086S50M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1150 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	TIN LEAD	SINGLE	R-PSMA-N72				Not Qualified	1179648 bit			e0		19 ns
IDT7MP6074S75M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	16KX36	16K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	589824 bit			e0		15 ns
IDT7MP6084S75M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	64KX36	64K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	2359296 bit			e0		15 ns
IDT7MP6084S50M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS	2200 mA	65536 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	64KX36	64K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	2359296 bit			e0		25 ns
IDT7MP6094S75M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO			NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K		TIN LEAD	SINGLE	R-PSMA-N80				Not Qualified	9437184 bit			e0		15 ns
IDT7MP4045S45M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	TIN LEAD	SINGLE	R-PSMA-N64			16.002 mm	Not Qualified	8388608 bit			e0	.08 Amp	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.