SOJ SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6R1016C1B-JC8	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0			.01 Amp		8 ns
KM616V4002AJ-12T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX16	256K		0 Cel		DUAL	1	R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V				YES		28.58 mm	12 ns
KM6164002CJ-1500	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						25.58 mm	15 ns
K6R1008V1C-JI15T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	73 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.005 Amp		15 ns
KM791001J-15	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	180 mA	131072 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX9	128K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1179648 bit	4.5 V	REGISTERED INPUT OUTPUT	e0		YES	.04 Amp	20.96 mm	8 ns
KM64B258J-12	Samsung	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.56 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.008 Amp	17.91 mm	12 ns
KM64V1003BJ-1200	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm		1048576 bit	3 V						20.95 mm	12 ns
K6R1016C1D-JI12	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	28.58 mm	12 ns
KM616V513J-20	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40		3.6 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	3 V		e0		YES	.0001 Amp	26.04 mm	20 ns
K6R1016C1C-JC20	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	28.58 mm	20 ns
K6R1004V1C-JP12T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.0003 Amp		12 ns
KM64V1003CLJI-20	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		256KX4	256K		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V						20.96 mm	20 ns
K6R1016C1B-JC12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.01 Amp	28.58 mm	12 ns
KM6161002CJI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	28.58 mm	12 ns
K6R1008V1A-JC12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V						20.96 mm	12 ns
KM6164002CJ-2000	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						25.58 mm	20 ns
KM64B258J-15	Samsung	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.56 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.008 Amp	17.91 mm	15 ns
K6R1016V1C-JI15T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0			.005 Amp		15 ns
KM6161002BIJ-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						25.58 mm	10 ns
KM616V1002BJ-800	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V						28.58 mm	8 ns
KM644002LJ-25	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0		YES	.0002 Amp	20.96 mm	25 ns
KM64V4002BJ-1200	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V						20.95 mm	12 ns
K6E0808C1E-JC10T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0			.002 Amp		10 ns
KM6466BJ-20	Samsung	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0		YES	.001 Amp	15.88 mm	20 ns
KM64V4002BJI-100	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V						20.95 mm	10 ns
K6R1008C1B-JI12T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.01 Amp		12 ns
K6R1004C1C-JI20T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.005 Amp		20 ns
KM64V4002CJ-12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.01 Amp	20.96 mm	12 ns
KM644002CJE-1200	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-25 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						20.95 mm	12 ns
KM616V1002BJI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.005 Amp	28.58 mm	10 ns
KM616V1002CJ-100	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V						28.58 mm	10 ns
KM616V1002BJ-8	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.005 Amp	28.58 mm	8 ns
K6R1016V1D-KC08	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN SILVER COPPER	DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit			e1	260		.005 Amp		8 ns
KM64V4002BLIJ-15	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS					20.96 mm	15 ns
K6R1016C1C-JI100	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel		DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit				240		.005 Amp		10 ns
K6R1016C1B-JI8T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0			.01 Amp		8 ns
KM64V4002BLJ-120	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V						20.95 mm	12 ns
KM6161002AJ-1500	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	65536 words	COMMON	5		16	SMALL OUTLINE	SOJ44,.44		1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm		1048576 bit	4.5 V				YES	.025 Amp	25.58 mm	15 ns
K6R1016V1A-JI20	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V						28.58 mm	20 ns
K6R1008V1A-JC15	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V						20.96 mm	15 ns
K6R1004C1C-JC20T	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0			.005 Amp		20 ns
KM69B257J-12	Samsung	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	175 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34	SRAMs	1.397 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.57 mm	7.62 mm	Not Qualified	294912 bit	4.5 V		e0		YES		20.96 mm	12 ns
K6R1004C1D-JI10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	20.96 mm	10 ns
K6R1016C1B-JI10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	195 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0			.01 Amp		10 ns
K6R1016V1B-JI12T	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0			.005 Amp		12 ns
KM64V4002CJI-120	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-40 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V						20.95 mm	12 ns
KM64V1003AJI-15	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	125 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3				Not Qualified	1048576 bit			e0			.005 Amp		15 ns
KM6161002CJI-20	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	28.58 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.