SOJ-I SRAM 92

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DS1350ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	70 ns
DS1350ABLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1345ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	70 ns
DS1330ABLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1345ABLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1330ABLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1345ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1645ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	100 ns
DS1645ABL-85	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1645ABL-120	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	120 ns
DS1645YL-85-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1645YL-120-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	120 ns
DS1645YL-85	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1645YL-120	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	120 ns
DS1645ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	70 ns
DS1645ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	100 ns
DS1645ABL-120-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	120 ns
DS1645ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	70 ns
DS1645YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	100 ns
DS1645ABL-85-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1650ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION		.005 Amp	24.5745 mm	100 ns
DS1345ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1350YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1330YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel		DUAL	R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION PERIOD		.00015 Amp	24.5745 mm	100 ns
DS1350ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	512KX8	512K	0 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	70 ns
DS1330ABL-100IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION = 10 YRS	e0	.00015 Amp	24.4475 mm	100 ns
DS1350ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	512KX8	512K	0 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1350ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1345YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1330ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.00015 Amp	24.5745 mm	70 ns
DS1330YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1330ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.00015 Amp	24.5745 mm	100 ns
DS1330YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1345YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS1350ABLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1350YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD		.00015 Amp	24.5745 mm	100 ns
DS1345ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	70 ns
DS1350YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1330ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.00015 Amp	24.5745 mm	70 ns
DS1330BL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel		DUAL	R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION PERIOD		.00015 Amp	24.5745 mm	100 ns
DS1345ABLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	100 ns
DS1245ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	24.5745 mm	100 ns
DS1250ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	24.5745 mm	70 ns
DS1245ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	24.5745 mm	70 ns
DS1250ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	24.5745 mm	100 ns
DS1245ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	24.5745 mm	70 ns
DS1250ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	24.5745 mm	70 ns
DS1345YL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0	.00015 Amp	24.5745 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.