SON SRAM 125

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SMJ5C1008-20HMMT	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE						20.955 mm	20 ns
SMJ5C1008-25HMM	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE		NOT SPECIFIED	NOT SPECIFIED		.002 Amp	20.955 mm	25 ns
5962-8959837MUA	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.4384 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.828 mm	25 ns
SMJ5C1008-25HMMT	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE						20.955 mm	25 ns
SMJ5C1008-25HM	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL	1	R-CDSO-N32		5.5 V			Not Qualified	1048576 bit	4.5 V					YES			25 ns
SMJ5C1008-20HM	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL	1	R-CDSO-N32		5.5 V			Not Qualified	1048576 bit	4.5 V					YES			20 ns
5962-8959837MUX	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDSO-N32		5.5 V	2.4384 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.828 mm	25 ns
SMJ5C1008-20HMM	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	LOW POWER STANDBY MODE		NOT SPECIFIED	NOT SPECIFIED		.002 Amp	20.955 mm	20 ns
5962-8959838MUX	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDSO-N32		5.5 V	2.4384 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.828 mm	20 ns
5962-8959838MUA	Texas Instruments	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.4384 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.828 mm	20 ns
IMS1624W45M	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16KX4	16K		0 Cel		DUAL		R-CDSO-N28		5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V							13.97 mm	45 ns
FM25VN02-DGTR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD			2.5 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOLCC8,.16,37	SRAMs	.95 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-N8					Not Qualified	262144 bit							.00015 Amp
FM25VN02-DG	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD			2.5 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOLCC8,.16,37	SRAMs	.95 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-N8					Not Qualified	262144 bit							.00015 Amp
IDT71M024L55LM	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
IDT71M025L55LB	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
IDT71M025L55LM	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
IDT71M025S55LB	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
IDT71M025S55LM	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
IDT71M024S55LB	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
IDT71M024L55LB	Renesas Electronics	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-55 Cel	TIN LEAD	DUAL		R-CDSO-N32		5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					20.828 mm	55 ns
MT5C1008EC20P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32	1				Not Qualified	1048576 bit							.01 Amp		20 ns
MT5C1008EC-20/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		20 ns
MT5C1009EC-20	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.007 Amp		20 ns
MT5C1009EC-25L/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.001 Amp		25 ns
MT5C1008EC45P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32	1				Not Qualified	1048576 bit							.01 Amp		45 ns
MT5C1001EC-55L883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.001 Amp		55 ns
MT5C1008EC55/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		55 ns
MT5C1009EC-25	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.007 Amp		25 ns
MT5C1009EC-55	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.007 Amp		55 ns
MT5C1001EC-25/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		25 ns
MT5C1009EC-35/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.01 Amp		35 ns
MT5C1008EC35/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		35 ns
MT5C1005EC-70L883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.001 Amp		70 ns
MT5C1005ECW35/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.01 Amp		35 ns
MT5C1008-55ECL	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.001 Amp		55 ns
MT5C1005EC-20/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		20 ns
MT5C1009EC-70P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.01 Amp		70 ns
MT5C1005EC-45/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		45 ns
MT5C1008EC70P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32	1				Not Qualified	1048576 bit							.01 Amp		70 ns
MT5C1001EC-70/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		70 ns
MT5C1008-35ECL	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.001 Amp		35 ns
MT5C1008EC55L	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-XDSO-N32	1				Not Qualified	1048576 bit							.001 Amp		55 ns
MT5C1001EC-35/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.01 Amp		35 ns
MT5C1005EC70P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.01 Amp		70 ns
MT5C1009EC-45L/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.001 Amp		45 ns
MT5C1009EC-35	Micron Technology	STANDARD SRAM	COMMERCIAL	32	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDSO-N32					Not Qualified	1048576 bit			e0				.007 Amp		35 ns
MT5C1009EC-45/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.01 Amp		45 ns
MT5C1009EC-35P/883C	Micron Technology	STANDARD SRAM	MILITARY	32	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOLCC32,.4	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-55 Cel		DUAL		R-XDSO-N32					Not Qualified	1048576 bit							.01 Amp		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.