TBGA SRAM 1,589

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS66WVH8M8ALL-166B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
IS66WVH8M8BLL-100B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	2.7 V	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm	100 MHz	6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NO	.00002 Amp	8 mm	40 ns
CY14V101QS-BK108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			128KX8	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1					8 mm
CY14V101QS-BK108XQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	105 Cel			128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1		260			8 mm
IS66WVH8M8ALL-166B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	36 ns
IS66WVH8M8BLL-100B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	40 ns
IS66WVH8M8DALL-200B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24		1.95 V	1.2 mm	200 MHz	6 mm		67108864 bit	1.7 V				260	NO	.00004 Amp	8 mm
71V3556SA133BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			128KX36	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e1	30	260			15 mm	4.2 ns
71V3556SA166BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			128KX36	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e1	30	260			15 mm	3.5 ns
71V65603S133BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V		e1	30	260		.06 Amp	15 mm	4.2 ns
71V65703S80BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.06 Amp	15 mm	8 ns
71V65703S85BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.06 Amp	15 mm	8.5 ns
71V67603S133BQGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.07 Amp	15 mm	4.2 ns
71V67703S75BQGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			256KX36	256K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	NOT SPECIFIED	260			15 mm	7.5 ns
71V67703S80BQGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	8 ns
CY14V101QS-BK108XQT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	105 Cel			128KX8	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1					8 mm
71V65603S100BQGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V		e1	30	260		.06 Amp	15 mm	5 ns
IDT71V67703S85BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225		.07 Amp	15 mm	8.5 ns
71V3556SA133BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128KX36	128K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e1	30	260			15 mm	4.2 ns
71V3556SA133BQGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.045 Amp	15 mm	4.2 ns
71V3556SA133BQI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			128KX36	128K		-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e0	30	225			15 mm	4.2 ns
71V3556SA166BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128KX36	128K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e1	30	260			15 mm	3.5 ns
71V3556SA166BQGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	166 MHz	13 mm	Not Qualified	4718592 bit	3.135 V		e1	30	260		.045 Amp	15 mm	3.5 ns
71V3559S75BQI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			256KX18	256K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e0		225			15 mm	7.5 ns
71V3577S75BQG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	131072 words	COMMON	3.3		36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		1 mm	70 Cel	NO	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	3.465 V	1.2 mm	117 MHz	13 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1		260	YES	.03 Amp	15 mm	7.5 ns
71V3577S85BQG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	NO	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1		260	YES	.03 Amp	15 mm	8.5 ns
71V3577S85BQI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	NO	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e0	30	225	YES	.035 Amp	15 mm	8.5 ns
71V65603S133BQGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e1	30	260		.06 Amp	15 mm	4.2 ns
71V65703S80BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	15 mm	8 ns
71V65803S100BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	15 mm	5 ns
71V65803S133BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	15 mm	4.2 ns
71V65803S150BQG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	15 mm	3.8 ns
71V65803S150BQI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	345 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e0	NOT SPECIFIED	225		.06 Amp	15 mm	3.8 ns
71V67603S133BQGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.07 Amp	15 mm	4.2 ns
71V67603S133BQI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		225		.07 Amp	15 mm	4.2 ns
71V67603S150BQG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	150 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.05 Amp	15 mm	3.8 ns
71V67603S150BQI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	150 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		225		.07 Amp	15 mm	3.8 ns
71V67603S166BQG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	166 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.05 Amp	15 mm	3.5 ns
71V67703S75BQG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			256KX36	256K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	NOT SPECIFIED	260			15 mm	7.5 ns
71V67703S75BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	117 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	7.5 ns
71V67703S80BQG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.05 Amp	15 mm	8 ns
71V67703S80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	8 ns
71V67703S80BQI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225		.07 Amp	15 mm	8 ns
71V67703S85BQG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.05 Amp	15 mm	8.5 ns
71V67703S85BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	8.5 ns
71V67703S85BQGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	8.5 ns
71V67703S85BQI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225		.07 Amp	15 mm	8.5 ns
71V67803S133BQG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel		3-STATE	512KX18	512K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.05 Amp	15 mm	4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.