TFBGA SRAM 1,321

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY62177EV30LL-55BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel		3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.7 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.2 V		e1	30	260		.000017 Amp	9.5 mm	55 ns
CY14B104NA-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e1	20	260		.005 Amp	10 mm	25 ns
IS66WVE4M16EBLL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	NO	3-STATE	4MX16	4M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V		e1		260	NO	.00015 Amp	8 mm	70 ns
CY14B104NA-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e1	20	260		.005 Amp	10 mm	25 ns
CY14V104NA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	262144 words	COMMON	3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	45 ns
CY14V101LA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
CY14V104NA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	262144 words	COMMON	3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	45 ns
IS61WV102416BLL-10MLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e1	10	260		.02 Amp	11 mm	10 ns
CY14V101LA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
IS66WVE4M16EALL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	NO	3-STATE	4MX16	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V		e1		260	NO	.00015 Amp	8 mm	70 ns
IS61WV51216BLL-10MLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	8388608 bit	2.4 V		e1	30	260		.02 Amp	11 mm	10 ns
IS61WV102416BLL-10MLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel			1MX16	1M	2.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm		16777216 bit	2.4 V		e1	10	260	YES	.025 Amp	11 mm	10 ns
IS62WV10248BLL-55BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX8	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		7.2 mm	Not Qualified	8388608 bit	2.5 V		e1	10	260		.00002 Amp	8.7 mm	55 ns
CY7C1071DV33-12BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	2097152 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	2MX16	2M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY14V101NA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	65536 words		3.3	1.8,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			64KX16	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
RMLV0816BGBG-4S2#KC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS	e1			YES	.00001 Amp	8.5 mm	45 ns
IS66WVE4M16EALL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel			4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
AS6C4008-55BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		BOTTOM		R-PBGA-B36	3	5.5 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	8 mm	55 ns
RMWV3216AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		33554432 bit	2.7 V		e1			YES	.000032 Amp	8.5 mm	55 ns
R1WV6416RBG-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel		3-STATE	4MX16	4M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8.5 mm	Not Qualified	67108864 bit	2.7 V				260		.000024 Amp	11 mm	55 ns
IS61WV51216EDBLL-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	2 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	8388608 bit	2.4 V						.015 Amp	8 mm	10 ns
RMLV0816BGBG-4S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		8388608 bit	2.7 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	8.5 mm	45 ns
CY7C1079DV33-12BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	4MX8	4M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C1079DV33-12BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	4MX8	4M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
IS64WV102416BLL-10MLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	125 Cel		3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e1	10	260		.05 Amp	11 mm	10 ns
IS64WV102416BLL-10MLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	125 Cel			1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		9 mm		16777216 bit	2.4 V							11 mm	10 ns
IS66WVE4M16TBLL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	NO	3-STATE	4MX16	4M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V		e1	10	260	NO	.00015 Amp	8 mm	70 ns
IS61LV6416-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.63 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3.135 V		e1	10	260		.01 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BLI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	16777216 bit	2.4 V		e3				.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BLI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V		e3				.006 Amp	8 mm	10 ns
IS61WV25616BLL-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V		e1	10	260		.009 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	16777216 bit	2.4 V						.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-10BI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V						.006 Amp	8 mm	10 ns
IS61WV25616EDBLL-8BI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.63 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.97 V						.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8BI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V						.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8BLI	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.63 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.97 V		e3				.006 Amp	8 mm	8 ns
IS61WV25616EDBLL-8BLI-TR	Integrated Silicon Solution	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V		e3				.006 Amp	8 mm	8 ns
71V416L12BEGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	4194304 bit	3 V		e1		260		.01 Amp	9 mm	12 ns
70T3519S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.2 mm	133 MHz	15 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.02 Amp	15 mm	15 ns
70V658S10BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm		15 mm	Not Qualified	2359296 bit	3.15 V		e0	20	225		.015 Amp	15 mm	10 ns
70V659S12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	465 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e0	20	225		.015 Amp	15 mm	12 ns
IS61WV10248BLL-10MLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3	2.5/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.75 mm	85 Cel		3-STATE	1MX8	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	8388608 bit	2.4 V		e1	10	260		.025 Amp	11 mm	10 ns
71V416L12BE8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	4	3.6 V	1.2 mm		9 mm	Not Qualified	4194304 bit	3 V		e0	30	225		.01 Amp	9 mm	12 ns
IDT70V659S10BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e1	30	260		.015 Amp	15 mm	10 ns
IDT70V659S10BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel		3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e1	30	260		.015 Amp	15 mm	10 ns
IS61WV102416BLL-10MI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e0	30	235		.02 Amp	11 mm	10 ns
IS63LV1024L-12BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B36	3	3.45 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3.15 V		e1	10	260		.0015 Amp	10 mm	12 ns
IS66WVE4M16EBLL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel			4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.