TSOP1 SRAM 1,820

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

IS62WV51216GBLL-45TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

8388608 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

71V256SA15PZGI

Renesas Electronics

CACHE SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G28

3

3.6 V

Not Qualified

262144 bit

3 V

e3

NOT SPECIFIED

260

.002 Amp

15 ns

AS7C316096A-10TIN

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

160 mA

2097152 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

2MX8

2M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

e3/e6

.04 Amp

18.4 mm

10 ns

AS7C316098A-10TIN

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

160 mA

1048576 words

COMMON

3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

e3/e6

40

260

YES

.04 Amp

18.4 mm

10 ns

CY62128ELL-45ZXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e3

20

260

.000004 Amp

18.4 mm

45 ns

IS62WV1288DBLL-45HLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

131072 words

COMMON

3.3

2.5/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

1.2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.3 V

e3

.000004 Amp

11.8 mm

45 ns

AS6C1616-55TIN

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

40

260

18.4 mm

55 ns

AS7C256A-10TCN

Alliance Memory

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

TIN

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

.002 Amp

11.8 mm

10 ns

CY62128ELL-45ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e3

20

260

.000004 Amp

18.4 mm

45 ns

IS62WV51216GBLL-45TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

8388608 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS64WV204816BLL-12CTLA3

Integrated Silicon Solution

STANDARD SRAM

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.4 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

12 ns

IDT71256SA15PZGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

11.8 mm

15 ns

IDT71256SA20PZGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

YES

.015 Amp

11.8 mm

20 ns

IDT71256SA25PZGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

11.8 mm

25 ns

IDT71V256SA12PZG8

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

90 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e3

40

260

.002 Amp

11.8 mm

12 ns

IS61WV204816BLL-10TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.4 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

10 ns

IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

10 ns

IS62WV102416GBLL-45TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

R1LV0816ASA-5SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3

2.7 V

1.2 mm

12 mm

8388608 bit

2.4 V

ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE

18.4 mm

70 ns

AS6C1008-55TIN

Alliance Memory

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

1.5 V

-40 Cel

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

40

260

18.4 mm

55 ns

CY7C199D-10ZXI

Infineon Technologies

STANDARD SRAM

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

262144 bit

4.5 V

YES

.003 Amp

11.8 mm

10 ns

IDT71V256SA12PZGI8

Renesas Electronics

CACHE SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

90 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e3

40

260

.002 Amp

11.8 mm

12 ns

R1LV3216RSA-5SI#B1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

33554432 bit

2.7 V

55 ns

R1LV3216RSA-5SI#S0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

2097152 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

2MX16

2M

2 V

-40 Cel

DUAL

R-PDSO-G48

2

3.6 V

Not Qualified

33554432 bit

2.7 V

260

.000012 Amp

55 ns

R1LV3216RSA-5SI#S1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

33554432 bit

2.7 V

55 ns

AS7C316096A-10TINTR

Alliance Memory

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

160 mA

2097152 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

2MX8

2M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

e3/e6

.04 Amp

18.4 mm

10 ns

CY62167GN30-45ZXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

260

18.4 mm

45 ns

IDT71V256SA15PZG

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

MATTE TIN

DUAL

1

R-PDSO-G28

3

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e3

YES

.002 Amp

11.8 mm

15 ns

IS62WV1288BLL-55TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.5 V

e3

18.4 mm

55 ns

IS62WV2568BLL-45HLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

COMMON

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX8

256K

1 V

-40 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.5 V

.00001 Amp

18.4 mm

45 ns

IS62WV2568EBLL-45HLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

85 Cel

256KX8

256K

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

3.6 V

2097152 bit

2.2 V

e3

10

260

45 ns

IS64C1024AL-15TA3

Integrated Silicon Solution

STANDARD SRAM

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

.0005 Amp

18.4 mm

15 ns

IS64C1024AL-15TLA3

Integrated Silicon Solution

STANDARD SRAM

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

131072 words

COMMON

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

.5 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

YES

.0005 Amp

18.4 mm

15 ns

CY62167DV30LL-45ZXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

37 mA

1048576 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.2 V

CONFIGURABLE AS 2M X 8 ALSO

e4

20

260

.00001 Amp

18.4 mm

45 ns

CY62167ELL-45ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

5.5 V

1.2 mm

12 mm

Not Qualified

16777216 bit

4.5 V

e3

30

260

18.4 mm

45 ns

TC55VBM316AFTN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

70 ns

CY14B116L-Z45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX8

2M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

260

18.4 mm

45 ns

CY14B116N-Z45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

260

18.4 mm

45 ns

CY62167G30-45ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

36 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP48,47,20

8

.5 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

e3

YES

.000016 Amp

18.4 mm

45 ns

CY62256LL-70ZI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

YES

11.8 mm

70 ns

CY62256NLL-55ZXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e4

30

260

.00001 Amp

11.8 mm

55 ns

CY7C1399BN-12ZXC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G28

3

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e4

30

260

.0005 Amp

11.8 mm

12 ns

CY62128BLL-70ZI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

15 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

18.4 mm

70 ns

CY62167G30-55ZXET

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP48,47,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

PURE TIN

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

YES

18.4 mm

55 ns

CY62177ESL-55ZXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

2.5/3.3,5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

2MX16

2M

1.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.2 V

ALSO OPERATES AT 5V SUPPLY

e3

20

260

.000017 Amp

18.4 mm

55 ns

CY62256LL-70ZXCT

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

MATTE TIN/NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3/e4

11.8 mm

70 ns

CY62256VNLL-70ZIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDSO-G28

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

11.8 mm

70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.