Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
8388608 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
45 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
3 V |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
Not Qualified |
262144 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
.002 Amp |
15 ns |
|||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
160 mA |
2097152 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.7 V |
e3/e6 |
.04 Amp |
18.4 mm |
10 ns |
|||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
160 mA |
1048576 words |
COMMON |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.7 V |
e3/e6 |
40 |
260 |
YES |
.04 Amp |
18.4 mm |
10 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
20 |
260 |
.000004 Amp |
18.4 mm |
45 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.3 V |
e3 |
.000004 Amp |
11.8 mm |
45 ns |
||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.7 V |
40 |
260 |
18.4 mm |
55 ns |
||||||||||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.002 Amp |
11.8 mm |
10 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
20 |
260 |
.000004 Amp |
18.4 mm |
45 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
8388608 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
45 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
AUTOMOTIVE |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
125 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
12 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
11.8 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.015 Amp |
11.8 mm |
20 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
11.8 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
40 |
260 |
.002 Amp |
11.8 mm |
12 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
10 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
10 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
45 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
45 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
2.7 V |
1.2 mm |
12 mm |
8388608 bit |
2.4 V |
ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE |
18.4 mm |
70 ns |
||||||||||||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
40 |
260 |
18.4 mm |
55 ns |
|||||||||||||||
Infineon Technologies |
STANDARD SRAM |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
32768 words |
COMMON |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
262144 bit |
4.5 V |
YES |
.003 Amp |
11.8 mm |
10 ns |
|||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
40 |
260 |
.002 Amp |
11.8 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
33554432 bit |
2.7 V |
55 ns |
||||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2097152 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
2 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
2 |
3.6 V |
Not Qualified |
33554432 bit |
2.7 V |
260 |
.000012 Amp |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
33554432 bit |
2.7 V |
55 ns |
||||||||||||||||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
160 mA |
2097152 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.7 V |
e3/e6 |
.04 Amp |
18.4 mm |
10 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
260 |
18.4 mm |
45 ns |
||||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G28 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
YES |
.002 Amp |
11.8 mm |
15 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.5 V |
e3 |
18.4 mm |
55 ns |
||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
1 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
2097152 bit |
2.5 V |
.00001 Amp |
18.4 mm |
45 ns |
||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
85 Cel |
256KX8 |
256K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
2097152 bit |
2.2 V |
e3 |
10 |
260 |
45 ns |
|||||||||||||||||||||||||
Integrated Silicon Solution |
STANDARD SRAM |
AUTOMOTIVE |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0005 Amp |
18.4 mm |
15 ns |
||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
AUTOMOTIVE |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
131072 words |
COMMON |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
.5 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0005 Amp |
18.4 mm |
15 ns |
||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
37 mA |
1048576 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.2 V |
CONFIGURABLE AS 2M X 8 ALSO |
e4 |
20 |
260 |
.00001 Amp |
18.4 mm |
45 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3 |
5.5 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
4.5 V |
e3 |
30 |
260 |
18.4 mm |
45 ns |
||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
70 ns |
||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.7 V |
260 |
18.4 mm |
45 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.7 V |
260 |
18.4 mm |
45 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
36 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP48,47,20 |
8 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
e3 |
YES |
.000016 Amp |
18.4 mm |
45 ns |
||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
11.8 mm |
70 ns |
|||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
30 |
260 |
.00001 Amp |
11.8 mm |
55 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
3 V |
e4 |
30 |
260 |
.0005 Amp |
11.8 mm |
12 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
18.4 mm |
70 ns |
||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP48,47,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1 V |
-40 Cel |
PURE TIN |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
YES |
18.4 mm |
55 ns |
|||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
45 mA |
2097152 words |
COMMON |
3 |
2.5/3.3,5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
1.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
33554432 bit |
2.2 V |
ALSO OPERATES AT 5V SUPPLY |
e3 |
20 |
260 |
.000017 Amp |
18.4 mm |
55 ns |
||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
MATTE TIN/NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3/e4 |
11.8 mm |
70 ns |
||||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDSO-G28 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
2.7 V |
11.8 mm |
70 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.