TSOP2 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6F2016V3A-TI70	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			128KX16	128K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	3 V						18.41 mm	70 ns
K6T4016C3C-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						18.41 mm	55 ns
K6T8016C3M-TB70	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	512KX16	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V		e0				18.41 mm	70 ns
KM616V1000BLTE-10	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0		YES	.00005 Amp	18.41 mm	100 ns
K6F8016U3M-RF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V						18.41 mm	55 ns
K6F2016S3M-TI12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2.5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			128KX16	128K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.3 V						18.41 mm	120 ns
KM616FR1000TI-30	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	65536 words	COMMON	2	1.8/2.7	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		2.7 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	1.8 V		e0			.000005 Amp	18.41 mm	300 ns
KM64V4002BLIT-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel			1MX4	1M		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS					20.95 mm	12 ns
K6T4016C3C-TF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				18.41 mm	55 ns
K6X4016T3F-TF85	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2.7 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0			.0003 Amp	18.41 mm	85 ns
KM616V1002BTI-8	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.005 Amp	18.41 mm	8 ns
KM616V4002CIT-20	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS					18.41 mm	20 ns
KM6161002CT-2000	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						18.41 mm	20 ns
K6T4008U1C-VB70	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				20.95 mm	70 ns
KM6161000BLR-5L0	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						18.41 mm	55 ns
K6R1016V1C-TC12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0	240		.005 Amp	18.41 mm	12 ns
K6T4008U1C-VF85	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				20.95 mm	85 ns
KM616FS1000TI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	2.5	2.3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.3 V		e0			.000005 Amp	18.41 mm	120 ns
KM616V1002CTI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.005 Amp	18.41 mm	12 ns
K6T4016V3B-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				18.41 mm	100 ns
KM616V4000ALT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel		DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V				YES		18.41 mm	120 ns
K6R1016V1B-TL12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.0004 Amp	18.41 mm	12 ns
K6F1016R4M-TB300	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			64KX16	64K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.3 V						18.41 mm	300 ns
KM616V1002CIT-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V						18.41 mm	15 ns
KM6164002ATE-200	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			256KX16	256K		-25 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						18.41 mm	20 ns
KM616V1002CLT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.0003 Amp	18.41 mm	12 ns
KM616V4002BTI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0			.01 Amp	18.41 mm	10 ns
K6R1008V1D-TC08	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.005 Amp	20.95 mm	8 ns
K6X4008T1F-VB850	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V					.00001 Amp	20.95 mm	85 ns
K6F8016U3M-TF700	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V						18.41 mm	70 ns
KM644002BT-10	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			.01 Amp	20.95 mm	10 ns
K6X4008T1F-UQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN BISMUTH	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e6			.00003 Amp	20.95 mm	85 ns
KM6161002BTI-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.01 Amp	18.41 mm	12 ns
KM616FV2000T-8	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	128KX16	128K	1.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	3 V		e0		YES	.00001 Amp	18.41 mm	85 ns
K6F8016U3M-TF550	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V						18.41 mm	55 ns
K6T4008U1C-VF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				20.95 mm	100 ns
KM6164002BT-15	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.01 Amp	18.41 mm	15 ns
KM6164002ATE-20	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			.01 Amp	18.41 mm	20 ns
KM616U4000CLT-8L	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0			.00001 Amp	18.41 mm	85 ns
K6T4016U3C-TB100	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V						18.41 mm	100 ns
KM616FS1000TI-8	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			64KX16	64K		-40 Cel		DUAL		R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.3 V						18.41 mm	85 ns
KM6161002BT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.01 Amp	18.41 mm	12 ns
K6F8016V3M-TF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V						18.41 mm	55 ns
KM616V1002CLTI-20	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			.0003 Amp	18.41 mm	20 ns
KM64V1003AT-15	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	125 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0		YES	.005 Amp	20.95 mm	15 ns
K6X8008C2B-TB55	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	1MX8	1M	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V		e0				18.41 mm	55 ns
KM6161002AT-1500	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	65536 words	COMMON	5		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm		1048576 bit	4.5 V				YES	.025 Amp	18.41 mm	15 ns
KM616S4000CLRI-12L	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		2.7 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.3 V	BATTERY BACKUP OPERATION	e0				18.41 mm	120 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.