TSSOP SRAM 1,185

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS61WV102416BLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.4 V		e3	10	260		.02 Amp	18.4 mm	10 ns
CY62167EV30LL-45ZXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.2 V		e4	20	260			18.4 mm	45 ns
23LC1024T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.4 mm
CY62148ESL-55ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.2 V	IT ALSO OPERATES AT 5V SUPPLY	e4	20	260		.000007 Amp	11.8 mm	55 ns
CY62177EV30LL-55ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	2MX16	2M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3	3.7 V	1.2 mm		12 mm	Not Qualified	33554432 bit	2.2 V		e3	20	260		.000017 Amp	18.4 mm	55 ns
CY62148ESL-55ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.2 V	IT ALSO OPERATES AT 5V SUPPLY	e4	20	260		.000007 Amp	11.8 mm	55 ns
23A1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	2.2 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	1.7 V		e3	40	260	NO	.000004 Amp	4.4 mm
23K256T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.4 mm
23K640-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.4 mm
N25S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.1 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.000004 Amp	4.4 mm
CY62138FV30LL-45ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY62128ELL-45ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
23LC1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00001 Amp	4.4 mm
CY62128EV30LL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.2 V		e4	20	260		.000003 Amp	11.8 mm	45 ns
23LCV1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.4 mm
23LC512-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	524288 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.4 mm
23LCV512-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm		524288 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.4 mm
CY62128EV30LL-45ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.2 V		e3	30	260		.000003 Amp	11.8 mm	45 ns
N01S818HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	2.2 V	1.1 mm		3 mm		1048576 bit	1.7 V		e3	30	260			4.4 mm
UPD431000AGZ-70LL-KJH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e6				.00001 Amp	18.4 mm	70 ns
CY62138FV30LL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
23K640-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	125 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.4 mm
N01S818HAT22IT	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	2.2 V	1.1 mm		3 mm		1048576 bit	1.7 V		e3	30	260			4.4 mm
AS6C4008-55STINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3					Not Qualified	4194304 bit							.00003 Amp		55 ns
M5M51008DVP-70H#BT	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
IS62C1024AL-35TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.00001 Amp	18.4 mm	35 ns
CY62167ELL-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3					Not Qualified	16777216 bit			e3	20	260				45 ns
R1WV6416RSD-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel		3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V				260		.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel		3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel		3-STATE	4MX16	4M	2.7 V	0 Cel		DUAL		R-PDSO-G52	1	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V						.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SR#B0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel		3-STATE	4MX16	4M	2 V	0 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel		3-STATE	4MX16	4M	2 V	0 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
CY62256NLL-70ZRXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28						Not Qualified	262144 bit							.00001 Amp		70 ns
23A640-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	1.95 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.4 mm
M5M51008DVP-70HI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	2	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
R1LV1616RSA-7SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel		DUAL		R-PDSO-G48	2					Not Qualified	16777216 bit					260				70 ns
23K640T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.4 mm
M5M51008DVP-70H#ST	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
AS6C62256-55STCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		SRAMs	.5 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V		e3/e6				.00002 Amp	11.8 mm	55 ns
M5M51008DVP-70HIST	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
R1LV1616RSA-7SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel		DUAL		R-PDSO-G48	2					Not Qualified	16777216 bit					260				70 ns
23K640T-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	125 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.4 mm
IS62C1024AL-35TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260			18.4 mm	35 ns
CY62128ELL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY62128ELL-55ZAXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.00003 Amp	11.8 mm	55 ns
CY62167DV30LL-45ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	37 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.2 V		e0				.00001 Amp	18.4 mm	45 ns
23K256-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.4 mm
23LCV1024T-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.4 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.